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PDF NDS9936 Data sheet ( Hoja de datos )
| Número de pieza | NDS9936 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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NDS9936
Dual N-Channel Enhancement Mode Field Effect Transistor
February 1996
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as DC/DC conversion,
disk drive motor control, and other battery powered circuits
where fast switching, low in-line power loss, and resistance to
transients are needed.
Features
5A, 30V. RDS(ON) = 0.05Ω @ VGS = 10V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
Dual MOSFET in surface mount package.
________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID
Drain Current - Continuous @ TA = 25°C
(Note 1a)
- Continuous @ TA = 70°C
(Note 1a)
- Pulsed
@ TA = 25°C
PD Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
(Note 1c)
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
© 1997 Fairchild Semiconductor Corporation
NDS9936
30
± 20
± 5.0
± 4.0
± 40
2
1.6
1
0.9
-55 to 150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
NDS9936.SAM
1 page  
Typical Electrical Characteristics (continued)
1.15
1.1
ID = 250µA
1.05
1
0.95
0.9
-50
-25
0
25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
10
5 VGS = 0V
2
1
0.5
0.2
0.1
0.05
TJ = 125°C
25°C
-55°C
0.02
0.01
0.2
0.4 0.6 0.8
1
VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
1500
1000
500 C iss
300
200
100
0.1
f = 1 MHz
VGS = 0V
C oss
C rss
0.2
0.5 1
2
5 10
VDS , DRAIN TO SOURCE VOLTAGE (V)
20 30
Figure 9. Capacitance Characteristics.
10
ID = 5A
8 VDS = 15V
6
4
2
0
0 2 4 6 8 10 12 14
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
16
VIN
VG S
RGEN
G
VDD
RL
D
VOUT
DUT
S
Figure 11. Switching Test Circuit.
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VO U T
10%
10%
90%
INVERTED
VIN
10%
50%
50%
PULSE W IDTH
Figure 12. Switching Waveforms.
NDS9936.SAM
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NDS9936.PDF ] | |
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