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Número de pieza NDS9410S
Descripción Single N-Channel Enhancement Mode Field Effect Transistor
Fabricantes Fairchild 
Logotipo Fairchild Logotipo



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February 1997
NDS9410S
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
Features
7.0 A, 30 V. RDS(ON) = 0.03 @ VGS = 10 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
____________________________________________________________________________________________
54
63
72
81
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
PD Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
© 1997 Fairchild Semiconductor Corporation
NDS9410S
30
±20
7
25
2.5
1.2
1
-55 to 150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
NDS9410S Rev.B

1 page




NDS9410S pdf
Typical Electrical Characteristics (continued)
1.1
1.08
ID = 250µA
1.06
1.04
1.02
1
0.98
0.96
0.94
-50
-25
0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage
Variation with Temperature.
20
10
5 VGS = 0V
1
0.1
0.01
TJ = 125°C
25°C
-55°C
0.001
0.0001
0
0.3 0.6 0.9 1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
1.5
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature.
2000
1500
1000
500
300
100
0.1
f = 1 MHz
VGS = 0 V
0.2 0.5
12
VDS (V)
Ciss
Coss
Crss
5 10 20 30
Figure 9. Capacitance Characteristics.
15
I D = 7.0A
12
9
6
3
0
05
VD S
=
5V
10V
15V
10 15 20 25 30
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
VIN
VGS
RGEN
G
VDD
RL
D
VOUT
DUT
S
Figure 11. Switching Test Circuit.
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
INVERTED
50%
PULSE WIDTH
Figure 12. Switching Waveforms.
NDS9410S Rev.B

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