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PDF NDS8936 Data sheet ( Hoja de datos )
| Número de pieza | NDS8936 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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June 1997
NDS8936
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
Features
5.3A, 30V. RDS(ON) = 0.035Ω @ VGS = 10V
RDS(ON) = 0.05Ω @ VGS = 4.5V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
Dual MOSFET in surface mount package.
________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings TA= 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case (Note 1)
© 1997 Fairchild Semiconductor Corporation
NDS8936
30
± 20
± 5.3
± 20
2
1.6
1
0.9
-55 to 150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
NDS8936 Rev. G
1 page  
Typical Electrical Characteristics
1.1
ID = 250µA
1.05
1
0.95
0.9
-50
-25
0
25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
25
1 0 VGS =0V
1
TJ = 125°C
0.1
25°C
-55°C
0.01
0.001
0.2
0.4 0.6 0.8 1 1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
2000
1500
1000
500
C iss
C oss
200 f = 1 MHz
VGS = 0V
C rss
100
0.1
0.2
0.5 1
2
5 10
VDS , DRAIN TO SOURCE VOLTAGE (V)
20 30
Figure 9. Capacitance Characteristics.
10
ID = 5.3A
8
VDS = 5V 10V 20V
6
4
2
0
0 5 10 15 20
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
25
20
VDS = 10V
16
12
8
TJ = -55°C
25°C
125°C
4
0
0 5 10 15 20 25
ID , DRAIN CURRENT (A)
Figure 11. Transconductance Variation with Drain
Current and Temperature.
NDS8936 Rev. G
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NDS8936.PDF ] | |
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