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PDF NDS8839H Data sheet ( Hoja de datos )
| Número de pieza | NDS8839H | |
| Descripción | Complementary MOSFET Half Bridge | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NDS8839H (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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March 1996
NDS8839H
Complementary MOSFET Half Bridge
General Description
These Complementary MOSFET half bridge devices are
produced using Fairchild's proprietary, high cell density,
DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage half bridge
applications or CMOS applications when both gates are
connected together.
Features
N-Channel 5.7A, 30V, RDS(ON)=0.045Ω @ VGS=10V.
P-Channel -4.0A, -30V, RDS(ON)=0.09Ω @ VGS=-10V.
High density cell design or extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
Matched pair for equal input capacitance and power capability
.
________________________________________________________________________________
V+
P-Gate
N -Gate
Vout
Vout
Vout
Vout
V-
Absolute Maximum Ratings
Symbol Parameter
TA= 25°C unless otherwise noted
N-Channel
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a & 2)
30
20
5.7
15
PD Maximum Power Dissipation
(Single Device)
(Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
(Note 1c)
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
(Single Device)
Thermal Resistance, Junction-to-Case
(Single Device)
(Note 1a)
(Note 1)
2.5
1.2
1
-55 to 150
50
25
P-Channel
-30
-20
-4
15
Units
V
V
A
W
°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDS8839H Rev. A1
1 page  
Typical Electrical Characteristics
2
1.75
VGS = 1 0 V
1.5
1.25
1
0.75
TJ = 125°C
25°C
-55°C
0.5
0
5 10 15 20
ID , DRAIN CURRENT (A)
25
Figure 7. N-Channel On-Resistance Variation
with Drain Current and Temperature.
2
VGS = -10V
1.5
TJ = 125°C
25°C
1
-55°C
0.5
0
-4 -8 -12 -16
ID , DRAIN CURRENT (A)
-20
Figure 8. P-Channel On-Resistance Variation
with Drain Current and Temperature.
25
V DS = 10V
20
TJ = -55°C 25°C
125°C
15
10
5
0
12345
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 9. N-Channel Transfer
Characteristics.
6
-20
VDS = -10V
-15
-10
TJ = -55°C
125°C
25°C
-5
0
-1 -2 -3 -4 -5
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 10. P-Channel Transfer
Characteristics.
-6
1.2
1.1
V DS= V GS
I D = 250µA
1
0.9
0.8
0.7
0.6
-50
-25
0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 11. N-Channel Gate Threshold Variation
with Temperature.
1.2
1.1
V DS = VGS
I D = -250µA
1
0.9
0.8
0.7
0.6
-50
-25
0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 12. P-Channel Gate Threshold Variation
with Temperature.
NDS8839H Rev. A1
5 Page 
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NDS8839H.PDF ] | |
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