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PDF NDS8434 Data sheet ( Hoja de datos )
| Número de pieza | NDS8434 | |
| Descripción | Single P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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June 1996
NDS8434
Single P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
Features
-6.5A, -20V. RDS(ON) = 0.035Ω @ VGS = -4.5V
RDS(ON) = 0.05Ω @ VGS = -2.7V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
___________________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
© 1997 Fairchild Semiconductor Corporation
NDS8434
-20
-8
-6.5
-20
2.5
1.2
1
-55 to 150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
NDS8434 Rev. A3
1 page  
Typical Electrical Characteristics (continued)
1.08
1.06
I D = -250µA
1.04
1.02
1
0.98
0.96
0.94
-50 -25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage
Variation with Temperature.
25
10 V GS = 0V
1
TJ = 125°C
25°C
-55°C
0.1
0.01
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
-VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature.
5500
4000
2000
1000
800
500
300
200
0.1
C iss
C oss
f = 1 MHz
VGS = 0V
C rss
0.2
0.5 1
2
5 10
-VDS , DRAIN TO SOURCE VOLTAGE (V)
20
Figure 9. Capacitance Characteristics.
5
I D = -6.5A
4
3
VDS = -5.0V
-15V
-10V
2
1
0
0 10 20 30 40
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
50
VIN
VG S
RGEN
G
-VD D
RL
D
VOUT
DUT
S
Figure 11. Switching Test Circuit.
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
50%
PULSE W IDTH
INVERTED
Figure 12. Switching Waveforms.
NDS8434 Rev. A3
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NDS8434.PDF ] | |
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