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PDF NDS8426A Data sheet ( Hoja de datos )

Número de pieza NDS8426A
Descripción Single N-Channel Enhancement Mode Field Effect Transistor
Fabricantes Fairchild 
Logotipo Fairchild Logotipo



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January 1998
NDS8426A
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
Features
10.5 A, 20 V. RDS(ON) = 0.0135 @ VGS= 4.5 V.
RDS(ON) = 0.016 @ VGS= 2.7 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
___________________________________________________________________________________________
54
63
72
81
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
PD Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
© 1998 Fairchild Semiconductor Corporation
NDS8426A
20
±8
10.5
30
2.5
1.2
1
-55 to 150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
NDS8426A Rev.B1

1 page




NDS8426A pdf
Typical Electrical Characteristics (continued)
1.12
I D = 250µA
1.08
1.04
1
0.96
0.92
-50
-25
0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation
with Temperature.
30
10 VGS = 0V
1
0.1
0.01
TJ = 125°C
25°C
-55°C
0.001
0.0001
0
0.3 0.6 0.9
VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature.
5000
3000
2000
Ciss
1000
500
Coss
f = 1 MHz
200 VGS = 0 V
Crss
100
0 .1
0 .2
0 .5 1
2
5 10 15 20
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Capacitance Characteristics.
4
I D = 10.5A
3
V DS = 5V
15V
10V
2
1
0
0 8 16 24 32
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
40
VIN
VGS
RGEN
G
VDD
RL
D
VOUT
DUT
S
Figure 11. Switching Test Circuit.
t d(on)
t on
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
INVERTED
50%
PULSE WIDTH
Figure 12. Switching Waveforms.
NDS8426A Rev.B1

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