PDF NCP5203MNR2G Data sheet ( Hoja de datos )

Número de pieza	NCP5203MNR2G
Descripción	2-in-1 DDR Power Controller
Fabricantes	ON
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No Preview Available ! NCP5203 2−in−1 DDR Power Controller The NCP5203 2−in−1 DDR Power Controller is a complete power solution for an ACPI compliant high current DDR memory system. This IC combines the efficiency of a PWM controller for the VDDQ supply with the simplicity of linear regulator for the VTT termination voltage. The NCP5203 contains a synchronous PWM buck controller for driving two external NFETs to form the DDR memory supply voltage (VDDQ). The $2.0 A user adjustable VTT terminator regulator has short circuit protection. An internal power good function monitors both the VDDQ and VTT outputs and signals if a fault occurs. Protective features include soft−start, undervoltage monitoring of 5VDUAL, over protection current (OCP), and thermal shutdown. The IC is packaged in 18−lead QFN. Features • Supports DDR I and DDR II • Incorporates VDDQ, VTT Regulators • Operates from Single 5 V Supply • VTT Regulator includes Integrated Power FETs Sourcing/Sinking up to 2.0 A • All External Power MOSFETs are N−Channel • Adjustable VDDQ • Adjustable VTT • Fixed Switching Frequency of 300 kHz for VDDQ in S0 • Fixed Switching Frequency of 600 kHz for VDDQ in S3 • Soft−Start Protection for VDDQ • Undervoltage Monitor of 5VDUAL • Short−Circuit Protection for VDDQ and VTT • Thermal Shutdown • Housed in QFN−18 • Pb−Free Package is Available* Typical Applications • DDR Memory Supply and Termination Voltage • Active Termination Busses (SSTL−2, SSTL−3) http://onsemi.com MARKING DIAGRAM 18 1 1 18−LEAD QFN, 5 x 6 mm MN SUFFIX CASE 505 NCP5203 AWLYYWW A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week PIN CONNECTIONS VDDQEN VTTEN PGOOD REFSNS FBVTT AGND SS COMP FBDDQ 1 2 3 4 5 6 7 8 9 18 VDDQ 17 VTT 16 PGND 15 BST 14 BGDDQ 13 TGDDQ 12 5VDUAL 11 SWDDQ 10 OCDDQ ORDERING INFORMATION Device Package Shipping† NCP5203MNR2 NCP5203MNR2G QFN 2500 Tape & Reel QFN 2500 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 January, 2005 − Rev. 1 1 Publication Order Number: NCP5203/D 1 page NCP5203 ELECTRICAL CHARACTERISTICS (5VDUAL = 5.0 V, TA = 0 to 70°C) Characteristic Test Conditions Supply Voltage 5VDUAL Operating Voltage − BST Operating Voltage − Supply Current Quiescent Supply Current (5VDUAL) − Shutdown Current VDDQEN = 0 V, VTTEN = 0 V Undervoltage Monitor 5VDUAL UVLO Lower Threshold Falling Edge 5VDUAL UVLO Hysteresis − Thermal Shutdown Thermal Trip Point (Note 2) VDDQ Switching Regulator FBDDQ Feedback Voltage, Control Loop in Regulation Feedback Input Current TA = 0 to 70_C TA = 25_C VFBDDQ = 1.25 V Oscillator Frequency in S0 Mode VDDQEN = VTTEN = 5 V Oscillator Frequency in S3 Mode VDDQEN = 5 V, VTTEN = 0 V Ramp−Amplitude Voltage At Max Duty Cycle OCDDQ Pin Current Sink VOCDDQ = 4.0 V, TA = 25_C OCDDQ Pin Current Sink Temperature Coefficient (Note 2) Minimum Duty Cycle − Maximum Duty Cycle − Soft−start Current Overvoltage Trip Threshold DDQEN = 5.0 V; VSS = 0 V With respect to Error Comparator Threshold Undervoltage Trip Threshold With respect to Error Comparator Threshold Error Amplifier DC Gain (Note 2) Unity Gain Bandwidth COMP_GND = 220 nF, 1.0 W in series (Note 2) Slew Rate COMP_GND = 10 pF (Note 2) Gate Drivers TGDDQ Gate Pull−HIGH Resistance IOUT = 400 mA, VBST = 10 V TGDDQ Gate Pull−LOW Resistance IOUT = 400 mA, VBST = 10 V BGDDQ Gate Pull−HIGH Resistance IOUT = 400 mA, VBST = 10 V BGDDQ Gate Pull−LOW Resistance IOUT = 400 mA, VBST = 10 V 2. Guaranteed by design, not tested in production. Min 4.5 4.0 − − 3.6 − − 1.225 1.232 − 262.5 500 − 23 − 0 − 3.5 115 − − − − − − − − Typ 5.0 10 5.0 − 3.95 0.2 150 1.25 1.25 − 300 600 1.25 35 3200 − 90 5.0 130 65 70 2.0 8.0 3.5 2.5 3.5 1.3 Max Unit 5.5 V 13.2 V 10 mA 1.0 mA 4.3 V −V − _C 1.275 1.268 1.0 337.5 700 − 47 − − − 6.5 − 75 V mA kHz kHz V mA ppm/_C % % mA % % − dB − MHz − V/mS −W −W −W −W http://onsemi.com 5 5 Page

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