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PDF NTF5P03T3 Data sheet ( Hoja de datos )
| Número de pieza | NTF5P03T3 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTF5P03T3
Preferred Device
Power MOSFET
5.2 Amps, 30 Volts
P–Channel SOT–223
Features
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature SOT–223 Surface Mount Package
• Avalanche Energy Specified
Applications
• DC–DC Converters
• Power Management
• Motor Controls
• Inductive Loads
• Replaces MMFT5P03HD
http://onsemi.com
5.2 AMPERES
30 VOLTS
RDS(on) = 100 mW
P–Channel
D
G
S
MARKING
DIAGRAM
1
2
3
4 SOT–223
CASE 318E
STYLE 3
AWW
5P03
A
WW
5P03
= Assembly Location
= Work Week
= Device Code
PIN ASSIGNMENT
4 Drain
123
Gate Drain Source
ORDERING INFORMATION
Device
Package Shipping
NTF5P03T3
SOT–223 1000 Tape & Reel
© Semiconductor Components Industries, LLC, 2002
May, 2002 – Rev. 1
1
Publication Order Number:
NTF5P03T3/D
1 page  
NTF5P03T3
TYPICAL ELECTRICAL CHARACTERISTICS
6000
5000
VDS = 0 V
Ciss
VGS = 0 V
TJ = 25°C
4000
3000
Crss
2000
1000
Ciss
Coss
Crss
0
10
–VGS 0 –VDS
10
20
30
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
1000
VDD = –15 V
ID = –4.0 A
VGS = –10 V
td(off)
12.5
–VDS
10
QT
25
20
7.5
5.0 Q1
2.5
Q2
–VGS
15
10
ID = –2 A
TJ = 25°C
5
00
0
10 20 30
40 50
60
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
3
VGS = 0 V
TJ = 25°C
2
tf
100
tr 1
td(on)
10
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
0
0.5 0.6 0.7 0.8 0.9 1.0
–VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
350
ID = –6 A
300
250
dc
1
10 ms
0.1
0.01
0.1
1 ms
100 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 ms
1 10
100
–VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Mounted on 2”sq. FR4 board (1”sq. 2 oz. Cu 0.06” thick
single sided) with on die operating, 10 s max.
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
200
150
100
50
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NTF5P03T3.PDF ] | |
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