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PDF NTF2955T3 Data sheet ( Hoja de datos )

Número de pieza NTF2955T3
Descripción Power MOSFET ( Transistor )
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! NTF2955T3 Hoja de datos, Descripción, Manual

NTF2955
Power MOSFET
−60 V, −2.6 A, Single P−Channel SOT−223
Features
TMOS7 Design for low RDS(on)
Withstands High Energy in Avalanche and Commutation Modes
Applications
Power Supplies
PWM Motor Control
Converters
Power Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
TA = 85°C
VDSS
VGS
ID
−60
±20
−2.6
−2.0
Unit
V
V
A
Power Dissipation
(Note 1)
Steady TA = 25°C
State
PD
2.3 W
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 25 V, VG = 10 V, IPK = 6.7 A,
L = 10 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
ID
PD
IDM
TJ,
TSTG
EAS
TL
−1.7 A
−1.3
1.0 W
−10.4
−55 to
175
225
A
°C
mJ
260 °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Tab (Drain) − Steady State (Note 2) RqJC
14 °C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
65
Junction−to−Ambient − Steady State (Note 2)
RqJA
150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1 in. pad size
(Cu. area = 1.127 in2 [1 oz] including traces)
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu. area = 0.341 in2)
http://onsemi.com
V(BR)DSS
−60 V
RDS(on) TYP
145 mW @ −10 V
ID MAX
−2.6 A
P−Channel
D
G
S
1
2
3
4
SOT−223
CASE 318E
STYLE 3
2955
L
WW
= Device Code
= Location Code
= Work Week
MARKING
DIAGRAM
2955
LWW
PIN ASSIGNMENT
4 Drain
123
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
NTF2955T1
NTF2955T3
SOT−223
SOT−223
1000/Tape & Reel
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 1
1
Publication Order Number:
NTF2955/D

1 page




NTF2955T3 pdf
NTF2955
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE K
A
F
4
S
1 23
B
L
G
0.08 (0003)
H
D
C
M
J
K
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.249 0.263
B 0.130 0.145
C 0.060 0.068
D 0.024 0.035
F 0.115 0.126
G 0.087 0.094
H 0.0008 0.0040
J 0.009 0.014
K 0.060 0.078
L 0.033 0.041
M 0_ 10 _
S 0.264 0.287
MILLIMETERS
MIN MAX
6.30 6.70
3.30 3.70
1.50 1.75
0.60 0.89
2.90 3.20
2.20 2.40
0.020 0.100
0.24 0.35
1.50 2.00
0.85 1.05
0 _ 10 _
6.70 7.30
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
http://onsemi.com
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