|
|
Número de pieza | NTE595 | |
Descripción | Silicon Diode / Dual / Common Cathode / High Speed | |
Fabricantes | NTE Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NTE595 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! NTE595
Silicon Diode, Dual, Common Cathode,
High Speed
Description:
The NTE595 consists of two silicon diodes in an SOT–23 type surface mount package. The cathodes
are common and the device is intended for high–speed switching applications in thick and thin–film
circuits.
Absolute Maximum Ratings:
Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Non–Repetitive Peak Forward Current (Per device, t = 1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . 500mA
Average Rectified Forward Current (Average over any 20ms period, Note 1), IF(Av) . . . . . . 250mA
DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Total Power Dissipation (TA ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Thermal Resistance, Junction–to–Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W
Note 1. Measured under pulse conditions: tp ≤ 0.5ms, IF(AV) = 150mA, t(av) ≤ 1ms, for sinusoidal
operation.
Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics (Per Diode): (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Forward Voltage
Reverse Current
Diode Capacitance
Forward Recovery Voltage
(When switched to IF = 10mA)
VF IF = 1mA
IF = 10mA
IF = 50mA
IF = 150mA
IR VR = 70V
VR = 70V, TJ = +150°C
Cd VR = 0, f = 1MHz
Vfr tr = 20ns
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max Unit
715 mV
855 mV
1000 mV
1250 mV
5 µA
100 µA
1.5 pF
1.75 V
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet NTE595.PDF ] |
Número de pieza | Descripción | Fabricantes |
NTE59 | Silicon Complementary Transistors | NTE |
NTE590 | Diode ( Rectifier ) | American Microsemiconductor |
NTE5900 | Silicon Power Rectifier Diode / 16 Amp | NTE Electronics |
NTE5906 | Silicon Power Rectifier Diode / 40 Amp | NTE Electronics |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |