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PDF NTE592 Data sheet ( Hoja de datos )
| Número de pieza | NTE592 | |
| Descripción | Silicon Diode / General Purpose / High Voltage | |
| Fabricantes | NTE Electronics | |
| Logotipo |  |
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NTE592
Silicon Diode, General Purpose, High Voltage
Description:
The NTE592 is a silicon epitaxial high–speed diode in an SOT–23 type surface mount package. This
device is intended for switching and general purposes applications.
Absolute Maximum Ratings:
Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
Non–Repetitive Peak Forward Current (t = 1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Average Rectified Forward Current (Average over any 20ms period, Note 1), IF(Av) . . . . . . 200mA
DC Forward Current (TA ≤ +25°C, Note 2), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mA
Total Power Dissipation (TA ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W
Thermal Resistance, Tab–to–Soldering Points, RthTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280K/W
Thermal Resistance, Soldering Points–to–Ambient, RthSA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90K/W
Note 1. Measured under pulse conditions: Pulse Time = tp ≤ 0.3ms.
Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Forward Voltage
Reverse Breakdown Voltage
Reverse Current
Differential Resistance
Diode Capacitance
Reverse Recovery Time
(When switched from
IF = 30mA to IR = 30mA
VF IF = 100mA
– – 1.00 V
IF = 200mA
– – 1.25 V
V(BR)R IR = 100µA, Note 1 & 3 250 –
–V
IR VR = 200V
– – 100 nA
VR = 200V, TJ = +150°C –
– 100 µA
rdiff IF = 10mA
– 5 –Ω
Cd VR = 0, f = 1MHz
– – 5 pF
trr measured at IR = 3mA,
RL = 100Ω
–
– 50 ns
Note 1. Measured under pulse conditions: Pulse Time = tp ≤ 0.3ms.
Note 3. At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage
limited to 275V.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE592.PDF ] | |
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