PDF NTE2532 Data sheet ( Hoja de datos )

Número de pieza	NTE2532
Descripción	Integrated Circuit NMOS / 32K EPROM / 300ns
Fabricantes	NTE
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No Preview Available ! NTE2532 Integrated Circuit NMOS, 32K EPROM, 300ns Description: The NTE2532 is a 32,768–bit, ultraviolet–light–erasable, electrically–programmable read–only memory in a 24–Lead DIP type package. This device is fabricated using N–channel silicon–gate technology for high speed and simple interface with MOS and bipolar circuits. All inputs (including program data inputs) can be directly driven by Series 74 TTL circuits without the use of external pull– up reistors, and each output can drive one Series 74 circuit without external resistors. The data out- puts are three–state for connecting mutiple devices to a common bus. Since the NTE2532 operates from a single +5V supply (in the read mode), it is ideal for use in micro- processor systems. One other (+25V) supply is needed for programming but all programming signals are TTL level, requiring a single 10ms pulse. For programming outside of the system, existing EPROM programmers can be used. Locations may be programmed singly, in blocks, or at random. Total programming time for all bits is 41 seconds. Features: D Organization: 4096 x 8 D Single +5V Power Supply D All Inputs/Outputs Fully TTL Compatible D Static Operation (No Clocks, No Refresh) D Max Acces/Min Cycle Time: 300ns D 8–Bit Output for Use in Microprocessor Based Systems D N–Channel Silicon–Gate Technology D 3–State Output Buffers D Low Power Dissipation: Active – 400mW Typical Standby – 100mW Standby D Guaranteed DC Noise Immunity with Standard TTL Loads D No Pull–Up Resistors Required Absolute Maximum Ratings: (TA = 0° to +70°C, Note 1 unless otherwise specified) Supply Voltage (Note 2), VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3V to +7V Supply Voltage (Note 2), VPP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3V to +28V All Input Voltages (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3V to +7V Output Voltage (Operating, with Respect to VSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3V to 7V Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Note 1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent dam- age to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the “Recommended Operation Conditions” section of this specification is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability. Note 2. Under absolute maximum ratings, voltage values are with respect to the most negative supply voltage, VS (substrate). 1 page

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