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Número de pieza | NTE112 | |
Descripción | Silicon Small Signal Schottky Diode | |
Fabricantes | NTE | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NTE112 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! NTE112
Silicon Small Signal Schottky Diode
Description:
The NTE112 is a metal to silicon junction diode in a DO35 type package primarly intended for UHF
mixers and ultrafast switching applications.
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Forward Continuous Current (TA = +25°C, Note 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Surge Non–Repetitive Forward Current (tp ≤ 1s, Note 1), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°
Thermal Resistance, Junction–to–Ambient (Note 1), Rth (j–a) . . . . . . . . . . . . . . . . . . . . . . . . 400°C/W
Maximum Lead Temperature (During soldering, 4mm from case, 10s max), TL . . . . . . . . . . +230°C
Note 1. On infinite heatsink with 4mm lead length.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Breakdown Voltage
Forward Voltage Drop
Reverse Current
Dynamic Characteristics
V(BR)
VF
IR
IR = 100µA
IF = 10mA, Note 2
VR = 1V, Note 2
Capacitance
Stored Charge
Frequency
C VR = 0V, f = 1MHz
QS IF = 10mA, Note 3
F f = 1GHz, Note 4
Min Typ Max Unit
5––V
– – 0.55 V
– – 0.05 µA
– – 1 pF
– – 3 pC
– 6 7 dB
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle < 2%.
Note 3. Measured on a B–line Electronics QS–3 stored charge meter.
Note 4. Noise Figure Test: – Diode is inserted in a tuned stripline circuit.
Local oscillator frequency 1GHz
Local oscillator power 1mW
Intermediate frequency amplifier, tuned on 30MHz, has a noise
figure, 1.5dB.
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet NTE112.PDF ] |
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