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PDF NTD110N02R Data sheet ( Hoja de datos )
| Número de pieza | NTD110N02R | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON | |
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NTD110N02R
Power MOSFET
24 V, 110 A, N−Channel DPAK
Features
• Planar HD3e Process for Fast Switching Performance
• Low RDS(on) to Minimize Conduction Loss
• Low Ciss to Minimize Driver Loss
• Low Gate Charge
• Optimized for High Side Switching Requirements in
High−Efficiency DC−DC Converters
• Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TC = 25°C
Drain Current
− Continuous @ TC = 25°C, Chip
− Continuous @ TC = 25°C,
Limited by Package
− Continuous @ TA = 25°C,
Limited by Wires
− Single Pulse (tp = 10 ms)
Thermal Resistance
− Junction−to−Ambient (Note 1)
− Total Power Dissipation @ TA = 25°C
− Drain Current − Continuous @ TA = 25°C
Thermal Resistance
− Junction−to−Ambient (Note 2)
− Total Power Dissipation @ TA = 25°C
− Drain Current − Continuous @ TA = 25°C
Operating and Storage
Temperature Range
VDSS
VGS
RqJC
PD
ID
ID
ID
ID
RqJA
PD
ID
RqJA
PD
ID
TJ, Tstg
24 V
±20 V
1.35 °C/W
110 W
110 A
110 A
32 A
110 A
52 °C/W
2.88 W
17.5 A
100
1.5
12.5
−55 to
175
°C/W
W
A
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc,
IL = 15.5 Apk, L = 1.0 mH, RG = 25 W)
Maximum Lead Temperature for Soldering
Purposes, (1/8″ from case for 10 s)
EAS 120 mJ
TL 260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in drain pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
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V(BR)DSS
24 V
RDS(on) TYP
4.1 mW @ 10 V
ID MAX
110 A
N−Channel
D
G
S
4
4
12
3
CASE 369AA
DPAK
(Surface Mount)
STYLE 2
1
2
3
CASE 369D
DPAK
(Straight Lead)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4
Drain
4
Drain
1
Gate
2
Drain
3
Source
12 3
Gate Drain Source
Y = Year
WW = Work Week
T110N2 = Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
December, 2004 − Rev. 6
1
Publication Order Number:
NTD110N02R/D
1 page  
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01 Single Pulse
0.00001
0.0001
NTD110N02R
0.001
0.01
t, TIME (s)
Figure 12. Thermal Response
0.1
1.0 10
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NTD110N02R.PDF ] | |
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