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PDF MMBT2369LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBT2369LT1 | |
| Descripción | Switcing Transistors | |
| Fabricantes | ON | |
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MMBT2369LT1,
MMBT2369ALT1
MMBT2369ALT1 is a Preferred Device
Switching Transistors
NPN Silicon
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
Symbol
VCEO
VCES
VCBO
VEBO
IC
Value
15
40
40
4.5
200
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
Symbol
Max
Unit
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 5
1
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAMS
xxx M G
G
1
xxx = M1J or 1JA
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBT2369LT1
MMBT2369LT1G
MMBT2369ALT1
SOT−23 3000/Tape & Reel
SOT−23 3000/Tape & Reel
(Pb−Free)
SOT−23 3000/Tape & Reel
MMBT2369ALT1G SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MMBT2369LT1/D
1 page  
1.0
0.8
0.6
0.4
0.2
0.02
200
100
50
20
1
MMBT2369LT1, MMBT2369ALT1
IC = 3 mA
IC = 10 mA
IC = 30 mA
IC = 50 mA
IC = 100 mA
TJ = 25°C
0.05 0.1
0.2
0.5 1
2
IB, BASE CURRENT (mA)
5
Figure 10. Maximum Collector Saturation Voltage Characteristics
10
20
TJ = 125°C
75°C
25°C
−15°C
−55°C
2 5 10 20
IC, COLLECTOR CURRENT (mA)
Figure 11. Minimum Current Gain Characteristics
1.4
βF = 10
1.2 TJ = 25°C
1.0
0.8
MAX VBE(sat)
MIN VBE(sat)
0.6
0.4 MAX VCE(sat)
0.2
12
5 10 20
50
IC, COLLECTOR CURRENT (mA)
Figure 12. Saturation Voltage Limits
100
VCE = 1 V
TJ = 25°C and 75°C
50 100
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| PDF Descargar | [ Datasheet MMBT2369LT1.PDF ] | |
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