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PDF MMBT2369ALT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBT2369ALT1 | |
| Descripción | Switching Transistors | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT2369LT1/D
Switching Transistors
NPN Silicon
COLLECTOR
3
1
BASE
MMBT2369LT1
MMBT2369ALT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCES
VCBO
VEBO
IC
15
40
40
4.5
200
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
556
300
2.4
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
417
– 55 to +150
MMBT2369LT1 = M1J; MMBT2369ALT1 = 1JA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (3)
(IC = 10 mAdc, IB = 0)
Collector – Emitter Breakdown Voltage
(IC = 10 µAdc, VBE = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150°C)
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
MMBT2369A
2
EMITTER
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
ICES
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Min
15
40
40
4.5
—
—
—
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Typ Max Unit
Vdc
——
Vdc
——
Vdc
——
Vdc
——
µAdc
— 0.4
— 30
µAdc
— 0.4
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
1 page  
MMBT2369LT1 MMBT2369ALT1
200
TJ = 125°C
VCE = 1 V
100 75°C
25°C
–15°C
TJ = 25°C and 75°C
50
–55°C
20
12
5 10 20
IC, COLLECTOR CURRENT (mA)
50 100
Figure 13. Minimum Current Gain Characteristics
1.4
βF = 10
1.2 TJ = 25°C
1.0
MAX VBE(sat)
0.8 MIN VBE(sat)
0.6
0.4 MAX VCE(sat)
0.2
12
5 10 20
50
IC, COLLECTOR CURRENT (mA)
Figure 14. Saturation Voltage Limits
100
1.0
0.5
θVC for VCE(sat)
0
APPROXIMATE DEVIATION
FROM NOMINAL
–0.5 –55°C to +25°C 25°C to 125°C
θVC ±0.15 mV/°C ±0.15 mV/°C
–1.0 θVB ±0.4 mV/°C ±0.3 mV/°C
–1.5
θVB for VBE(sat)
–2.0
(25°C to 125°C)
(–55°C to +25°C)
(–55°C to +25°C)
(25°C to 125°C)
–2.5
0
10 20 30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Figure 15. Typical Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MMBT2369ALT1.PDF ] | |
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