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Número de pieza | MMBT2369A | |
Descripción | NPN Switching Transistor | |
Fabricantes | Fairchild | |
Logotipo | ||
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MMBT2369A
NPN Switching Transistor
Description
This device is designed for high speed saturated
switching at collector currents of 10 mA to 100 mA.
Sourced from process 21.
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Ordering Information
Part Number
MMBT2369A
Marking
1S
Package
SOT-23 3L
Packing Method
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
VCBO
VEBO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
15
40
4.5
200
-55 to +150
V
V
V
mA
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation
MMBT2369A Rev. 1.1.0
www.fairchildsemi.com
1 page Typical Performance Characteristics (Continued)
-30
I C= 100 mA
-25 VCC = 3.0 V
-20 t f = 2.0 ns
-15
3.0 ns
4.0 ns
8.0 ns
-10 12.0 ns
-5
0
0 5 10 15 20 25 30
I B1 - TURN ON BASE CURRENT (mA)
Figure 13. Fall Time vs.
Turn-On and Turn-Off Base Currents
-6
I C= 10 mA
-5 V CC= 3.0 V
t d = 8.0 ns
-4
-3
5.0 ns
4.0 ns
-2
3.0 ns
-1
0
12
5 10 20
50
I B1 - TURN ON BASE CURRENT (mA)
Figure 14. Delay Time vs. Base-Emitter Off Voltage
and Turn-On Base Current
50
VCC = 3.0 V
10 t r= 2.0 ns
5.0 ns
1
10 ns
20 ns
0
1 10 100 500
I C - COLLE CTOR CURRENT (mA)
Figure 15. Rise Time vs. Turn-On Base Current and
Collector Current
500
400 TO-92
300
200
SOT-23
100
0
0 25 50 75 100 125
TE MPE RATURE (°C)
Figure 16. Power Dissipation vs.
Ambient Temperature
150
© 1997 Fairchild Semiconductor Corporation
MMBT2369A Rev. 1.1.0
5
www.fairchildsemi.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet MMBT2369A.PDF ] |
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