|
|
PDF MMBT2222 Data sheet ( Hoja de datos )
| Número de pieza | MMBT2222 | |
| Descripción | Surface mount Si-Epitaxial PlanarTransistors | |
| Fabricantes | Diotec | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MMBT2222 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
MMBT2222 / MMBT2222A
MMBT2222 / MMBT2222A
NPN
Surface Mount Si-Epi-Planar Switching Transistors
Si-Epi-Planar Schalttransistoren für die Oberflächenmontage
Version 2006-05-15
2.9 ±0.1
0.4 3
Type
Code
1
2
1.1
1.9
Dimensions - Maße [mm]
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
NPN
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
MMBT2222 MMBT2222A
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO
30 V
40 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
VCBO
60 V
75 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
VEBO
5V
6V
Power dissipation – Verlustleistung
Ptot 250 mW 1)
Collector current – Kollektorstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
IC 600 mA
Tj -55...+150°C
TS -55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
IC = 0.1 mA,
IC = 1 mA,
IC = 10 mA,
IC = 150 mA,
IC = 500 mA,
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V 2)
MMBT2222
MMBT2222A
h-Parameters at/bei VCE = 10 V, f = 1 kHz, IC = 1 mA / 10 mA
Small signal current gain
Kleinsignal-Stromverstärkung
MMBT2222
MMBT2222A
Input impedance – Eingangs-Impedanz
MMBT2222
MMBT2222A
Output admittance – Ausgangs-Leitwert
MMBT2222
MMBT2222A
hFE
hFE
hFE
hFE
hFE
hFE
hfe
hfe
hie
hie
hoe
hoe
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
35 –
–
50 –
–
75 –
–
100 – 300
30 –
40 –
–
–
50 – 300
75 – 375
2 kΩ – 8 kΩ
0.25 kΩ – 1.25 kΩ
5 µS
25 µS
– 35 µS
– 200 µS
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MMBT2222.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MMBT2222 | GENERAL PURPOSE NPN TRANSISTORS |  TIPTEK |
| MMBT2222 | Diode ( Rectifier ) |  American Microsemiconductor |
| MMBT2222 | NPN (GENERAL PURPOSE TRANSISTOR) |  Samsung |
| MMBT2222 | Surface mount Si-Epitaxial PlanarTransistors | Diotec |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |