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PDF MMBT2132T1 Data sheet ( Hoja de datos )
| Número de pieza | MMBT2132T1 | |
| Descripción | General Purpose Transistors | |
| Fabricantes | ON | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT2132T1/D
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General Purpose Transistors
NPN Bipolar Junction Transistor
(Complementary PNP Device: MMBT2131T1/T3)
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Collector–Emitter Voltage
VCEO
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
VCBO
VEBO
IC
Base Current
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (1)
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (2)
IB
PD
PD
RqJA
PD
PD
RqJA
Operating and Storage Temperature Range
TJ, Tstg
Value
30
40
5.0
700
350
342
178
366
665
346
188
– 55 to +150
Unit
V
V
V
mA
mA
mW
mW
°C/W
mW
mW
°C/W
°C
MMBT2132T1
MMBT2132T3
0.7 AMPERES
30 VOLTS — V(BR)CEO
342 mW
65
4
1
23
CASE 318 F– 02, STYLE 2
SC–59 — 6 Lead
BASE
PIN 6
COLLECTOR
PINS 2, 5
EMITTER
PIN 3
NPN
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector – Base Breakdown Voltage
(IC = 100 mAdc)
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc)
Emitter–Base Breakdown Voltage
(IE = 100 mAdc)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0 Adc)
(VCB = 25 Vdc, IE = 0 Adc, TA = 125°C)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0 Adc)
ON CHARACTERISTICS
V(BR)CBO
Vdc
40 — —
V(BR)CEO
Vdc
30 — —
V(BR)EBO
Vdc
5.0 — —
ICBO
mAdc
— — 1.0
— — 10
IEBO
mAdc
— — 10
DC Current Gain
(VCE = 3.0 Vdc, IC = 100 mAdc)
Collector – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
Collector – Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
Base–Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
Collector–Emitter Saturation Voltage
(IC = 700 mAdc, VCE = 1.0 Vdc)
hFE
150 —
Vdc
—
VCE(sat)
—
Vdc
— 0.25
VCE(sat)
—
Vdc
— 0.4
VBE(sat)
—
Vdc
— 1.1
VBE(on)
—
Vdc
— 1.0
1. Minimum FR–4 or G–10 PCB, Operating to Steady State.
2. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), Operating to Steady State.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
©MMoototorroollaa, IBncip. 1o9la98r Power Transistor Device Data
3–1
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| PDF Descargar | [ Datasheet MMBT2132T1.PDF ] | |
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