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PDF MMBT2131T1 Data sheet ( Hoja de datos )
| Número de pieza | MMBT2131T1 | |
| Descripción | General Purpose Transistors | |
| Fabricantes | ON | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT2131T1/D
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General Purpose Transistors
MMBT2131T1
MMBT2131T3
PNP Bipolar Junction Transistor
(Complementary NPN Device: MMBT2132T1/T3)
NOTE: Voltage and Current are negative for the PNP Transistor.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Base Current
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (1)
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (2)
Operating and Storage Temperature Range
VCEO
VCBO
VEBO
IC
IB
PD
PD
RqJA
PD
PD
RqJA
TJ, Tstg
30
40
5.0
700
350
342
178
366
665
346
188
– 55 to +150
Unit
V
V
V
mA
mA
mW
mW
°C/W
mW
mW
°C/W
°C
0.7 AMPERES
30 VOLTS — V(BR)CEO
342 mW
65
4
1
23
CASE 318 F– 02, STYLE 2
SC–59 — 6 Lead
BASE
PIN 6
COLLECTOR
PINS 2, 5
EMITTER
PIN 3
PNP
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector – Base Breakdown Voltage
(IC = 100 mAdc)
V(BR)CBO
Vdc
40 — —
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc)
V(BR)CEO
Vdc
30 — —
Emitter–Base Breakdown Voltage
(IE = 100 mAdc)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0 Adc)
(VCB = 25 Vdc, IE = 0 Adc, TA = 125°C)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0 Adc)
V(BR)EBO
Vdc
5.0 — —
ICBO
mAdc
— — 1.0
— — 10
IEBO
mAdc
— — 10
ON CHARACTERISTICS
DC Current Gain
(VCE = 3.0 Vdc, IC = 100 mAdc)
hFE
150 —
Vdc
—
Collector – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
—
Vdc
— 0.25
Collector – Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VCE(sat)
—
Vdc
— 0.4
Base–Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VBE(sat)
—
Vdc
— 1.1
Collector–Emitter Saturation Voltage
(IC = 700 mAdc, VCE = 1.0 Vdc)
VBE(on)
—
Vdc
— 1.0
1. Minimum FR–4 or G–10 PCB, Operating to Steady State.
2. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), Operating to Steady State.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
©MMoototorroollaa, IBncip. 1o9la98r Power Transistor Device Data
3–1
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