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Descripción COMPLEMENTARY SILICON POWER DARLINGTONS
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Complementary Power
Darlingtons
For Isolated Package Applications
Designed for general–purpose amplifiers and switching applications, where the
mounting surface of the device is required to be electrically isolated from the heatsink
or chassis.
Electrically Similar to the Popular TIP122 and TIP127
100 VCEO(sus)
5 A Rated Collector Current
No Isolating Washers Required
Reduced System Cost
High DC Current Gain — 2000 (Min) @ IC = 3 Adc
UL Recognized, File #E69369, to 3500 VRMS Isolation
Order this document
by MF122/D
MJNFP1N22
MJPFN1P27
COMPLEMENTARY
SILICON
POWER DARLINGTONS
5 AMPERES
100 VOLTS
30 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCASE 221D–02
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTO–220 TYPE
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRMS Isolation Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(for 1 sec, R.H. < 30%,
TA = 25_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
Test No. 1 Per Fig. 14
Test No. 2 Per Fig. 15
Test No. 3 Per Fig. 16
VCEO
VCB
VEB
VISOL
IC
100
100
5
4500
3500
1500
5
8
Vdc
Vdc
Vdc
VRMS
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation* @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
IB 0.12 Adc
PD 30 Watts
0.24 W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C
Derate above 25_C
PD 2 Watts
0.016
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 150
IC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
RθJA
62.5 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case*
RθJC
4.1 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLead Temperature for Soldering Purpose
TL 260 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ* Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on
a heatsink with thermal grease and a mounting torque of 6 in. lbs.
(1) Proper strike and creepage distance must be provided.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1

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MJE127 pdf
NPN
MJF122
3
TJ = 25°C
2.5
MJF122 MJF127
PNP
MJF127
3
TJ = 25°C
2.5
22
1.5 VBE(sat) @ IC/IB = 250
1.5 VBE @ VCE = 4 V
VBE @ VCE = 4 V
1 VCE(sat) @ IC/IB = 250
0.5
0.1
0.2 0.3 0.5 0.7 1
2 3 5 7 10
IC, COLLECTOR CURRENT (AMP)
1
0.5
0.1
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.2 0.3 0.5 0.7 1
23
IC, COLLECTOR CURRENT (AMP)
Figure 10. Typical “On” Voltages
5 7 10
+5
+4
+3
+2
+1
0
–1
–2
–3
–4
–5
0.1
*IC/IB hFE 3
25°C to 150°C
– 55°C to 25°C
+5
+ 4 *IC/IB hFE 3
+3
+2
+1
25°C to 150°C
0
*θVC FOR VCE(sat)
25°C to 150°C
θVB FOR VBE
– 55°C to 25°C
0.2 0.3 0.5 0.7 1
23 5
IC, COLLECTOR CURRENT (AMP)
7 10
– 1 *θVC FOR VCE(sat)
– 2 – 55°C to 25°C
– 3 θVB FOR VBE
– 4 – 55°C to 25°C 25°C to 150°C
–5
0.1 0.2 0.3 0.5 1 2 3 5 7
IC, COLLECTOR CURRENT (AMP)
Figure 11. Typical Temperature Coefficients
10
105
REVERSE
104
FORWARD
VCE = 30 V
103
105
REVERSE
104
FORWARD
VCE = 30 V
103
102
TJ = 150°C
101
100 100°C
102
101 TJ = 150°C
100°C
100
10–1 25°C
– 0.6 – 0.4 – 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1
VBE, BASE–EMITTER VOLTAGE (VOLTS)
+ 1.2 + 1.4
10–1 25°C
+ 0.6 + 0.4 + 0.2 0 – 0.2 – 0.4 – 0.6 – 0.8 – 1
VBE, BASE–EMITTER VOLTAGE (VOLTS)
– 1.2 – 1.4
Figure 12. Typical Collector Cut–Off Region
Motorola Bipolar Power Transistor Device Data
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