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PDF M36W832TE Data sheet ( Hoja de datos )
| Número de pieza | M36W832TE | |
| Descripción | 32 Mbit 2Mb x16 / Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM / Multiple Memory Product | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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M36W832TE
M36W832BE
32 Mbit (2Mb x16, Boot Block) Flash Memory
and 8 Mbit (512Kb x16) SRAM, Multiple Memory Product
FEATURES SUMMARY
s SUPPLY VOLTAGE
– VDDF = 2.7V to 3.3V
– VDDS = VDDQF = 2.7V to 3.3V
– VPPF = 12V for Fast Program (optional)
s ACCESS TIMES: 70ns and 85ns
s LOW POWER CONSUMPTION
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M36W832TE: 88BAh
– Bottom Device Code, M36W832BE: 88BBh
FLASH MEMORY
s 32 Mbit (2Mb x16) BOOT BLOCK
– 8 x 4 KWord Parameter Blocks (Top or
Bottom Location)
s PROGRAMMING TIME
– 10µs typical
– Double Word Programming Option
– Quadruple Word Programming Option
s BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WPF for Block Lock-Down
s AUTOMATIC STANDBY MODE
s PROGRAM and ERASE SUSPEND
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s COMMON FLASH INTERFACE
s SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device identifier
Figure 1. Packages
FBGA
Stacked LFBGA66 (ZA)
12 x 8mm
SRAM
s 8 Mbit (512Kb x 16)
s ACCESS TIME: 70ns
s LOW VDDS DATA RETENTION: 1.5V
s POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
May 2003
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1 page  
M36W832TE, M36W832BE
Table 31. Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Table 32. Primary Algorithm-Specific Extended Query Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Table 33. Security Code Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
APPENDIX C. FLASH MEMORY FLOWCHARTS and PSEUDO CODES . . . . . . . . . . . . . . . . . . . . . 53
Figure 26. Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Figure 27. Double Word Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Figure 28. Quadruple Word Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . 55
Figure 29. Program Suspend & Resume Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . 56
Figure 30. Erase Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Figure 31. Erase Suspend & Resume Flowchart and Pseudo Code. . . . . . . . . . . . . . . . . . . . . . . . 58
Figure 32. Locking Operations Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Figure 33. Protection Register Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . 60
APPENDIX D. FLASH MEMORY COMMAND INTERFACE and PROGRAM/ERASE CONTROLLER
STATE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Table 34. Write State Machine Current/Next, sheet 1 of 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Table 35. Write State Machine Current/Next, sheet 2 of 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
REVISION HISTORY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Table 36. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
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5 Page 
M36W832TE, M36W832BE
Flash Memory Component
The Flash Memory is a 32 Mbit (2 Mbit x 16) device
that can be erased electrically at block level and
programmed in-system on a Word-by-Word basis.
These operations can be performed using a single
low voltage (2.7 to 3.6V) supply. VDDQF allows to
drive the I/O pin down to 1.65V. An optional 12V
VPPF power supply is provided to speed up cus-
tomer programming.
The device features an asymmetrical blocked ar-
chitecture with an array of 71 blocks: 8 Parameter
Blocks of 4 KWords and 63 Main Blocks of 32
KWords. The M36W832TE has the Parameter
Blocks at the top of the memory address space
while the M36W832BE locates the Parameter
Blocks starting from the bottom. The memory
maps are shown in Figure 5, Block Addresses.
The Flash Memory features an instant, individual
block locking scheme that allows any block to be
locked or unlocked with no latency, enabling in-
stant code and data protection. All blocks have
three levels of protection. They can be locked and
locked-down individually preventing any acciden-
tal programming or erasure. There is an additional
hardware protection against program and erase.
When VPPF ≤ VPPLK all blocks are protected
Figure 5. Flash Block Addresses
against program or erase. All blocks are locked at
Power Up.
Each block can be erased separately. Erase can
be suspended in order to perform either read or
program in any other block and then resumed.
Program can be suspended to read data in any
other block and then resumed. Each block can be
programmed and erased over 100,000 cycles.
The device includes a Protection Register to in-
crease the protection of a system design. The Pro-
tection Register is divided into two segments, the
first is a 64 bit area which contains a unique device
number written by ST, while the second is a 128 bit
area, one-time-programmable by the user. The
user programmable segment can be permanently
protected. Figure 6, shows the Flash Security
Block and Protection Register Memory Map.
Program and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller takes care of the tim-
ings necessary for program and erase operations.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
Top Boot Block Addresses
Bottom Boot Block Addresses
1FFFFF
1FF000
4 KWords
1F8FFF
1F8000
1F7FFF
1F0000
4 KWords
32 KWords
00FFFF
008000
007FFF
000000
32 KWords
32 KWords
Total of 8
4 KWord Blocks
1FFFFF
1F8000
1F7FFF
1F0000
32 KWords
32 KWords
Total of 63
32 KWord Blocks
00FFFF
008000
007FFF
007000
32 KWords
4 KWords
000FFF
000000
4 KWords
Note: Also see Appendix A, Tables 26 and 27 for a full listing of the Flash Block Addresses.
Total of 63
32 KWord Blocks
Total of 8
4 KWord Blocks
AI90164
11/64
11 Page | ||
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| PDF Descargar | [ Datasheet M36W832TE.PDF ] | |
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