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PDF M36W432TZA Data sheet ( Hoja de datos )
| Número de pieza | M36W432TZA | |
| Descripción | 32 Mbit 2Mb x16 / Boot Block Flash Memory and 4 Mbit 256K x16 SRAM / Multiple Memory Product | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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M36W432T
M36W432B
32 Mbit (2Mb x16, Boot Block) Flash Memory
and 4 Mbit (256K x16) SRAM, Multiple Memory Product
PRODUCT PREVIEW
FEATURES SUMMARY
s SUPPLY VOLTAGE
– VDDF = 2.7V to 3.3V
– VDDS = VDDQF = 2.7V to 3.3V
– VPPF = 12V for Fast Program (optional)
s ACCESS TIME: 70,85ns
s LOW POWER CONSUMPTION
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M36W432T: 88BAh
– Bottom Device Code, M36W432B: 88BBh
FLASH MEMORY
s 32 Mbit (2Mb x16) BOOT BLOCK
– 8 x 4 KWord Parameter Blocks (Top or
Bottom Location)
s PROGRAMMING TIME
– 10µs typical
– Double Word Programming Option
s BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WPF for Block Lock-Down
s AUTOMATIC STAND-BY MODE
s PROGRAM and ERASE SUSPEND
s COMMON FLASH INTERFACE
– 64 bit Security Code
s SECURITY
– 64 bit user programmable OTP cells
– 64 bit unique device identifier
– One parameter block permanently lockable
SRAM
s 4 Mbit (256K x 16 bit)
s ACCESS TIME: 70ns
s LOW VDDS DATA RETENTION: 1.5V
s POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
Figure 1. Packages
FBGA
Stacked LFBGA66 (ZA)
8 x 8 ball array
February 2002
This is preliminary information on a new product now in development. Details are subject to change without notice.
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1 page  
M36W432T, M36W432B
SUMMARY DESCRIPTION
The M36W432 is a low voltage Multiple Memory
Product which combines two memory devices; a
32 Mbit boot block Flash memory and a 4 Mbit
SRAM. Recommended operating conditions do
not allow both the Flash and the SRAM to be ac-
tive at the same time.
The memory is offered in a Stacked LFBGA66 (0.8
mm pitch) package and is supplied with all the bits
erased (set to ‘1’).
Figure 2. Logic Diagram
VDDQF VDDS
VDDF VPPF
21
A0-A20
16
DQ0-DQ15
EF
GF
WF
RPF
WPF
E1S
E2S
GS
WS
UBS
LBS
M36W432T
M36W432B
Table 1. Signal Names
A0-A17
Address Inputs
A18-A20
Address Inputs for Flash Chip only
DQ0-DQ15 Data Input/Output
VDDF
Flash Power Supply
VDDQF
Flash Power Supply for I/O Buffers
VPPF
Flash Optional Supply Voltage for Fast
Program & Erase
VSSF
Flash Ground
VDDS
SRAM Power Supply
VSSS
SRAM Ground
NC Not Connected Internally
Flash control functions
EF Chip Enable input
GF Output Enable input
WF Write Enable input
RPF
Reset input
WPF
Write Protect input
SRAM control functions
E1S, E2S
Chip Enable inputs
GS Output Enable input
WS Write Enable input
UBS
Upper Byte Enable input
LBS Lower Byte Enable input
VSSF VSSS
AI05200
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5 Page 
Figure 5. Flash Block Addresses
Top Boot Block Addresses
M36W432T, M36W432B
Bottom Boot Block Addresses
1FFFFF
1FF000
4 KWords
1F8FFF
1F8000
1F7FFF
1F0000
4 KWords
32 KWords
00FFFF
008000
007FFF
000000
32 KWords
32 KWords
Total of 8
4 KWord Blocks
1FFFFF
1F8000
1F7FFF
1F0000
32 KWords
32 KWords
Total of 63
32 KWord Blocks
00FFFF
008000
007FFF
007000
32 KWords
4 KWords
000FFF
000000
4 KWords
Note: Also see Appendix A, Tables 26 and 27 for a full listing of the Flash Block Addresses.
Figure 6. Flash Security Block Memory Map
Total of 63
32 KWord Blocks
Total of 8
4 KWord Blocks
AI05203
Parameter Block # 0
88h
User Programmable OTP
85h
84h
Unique device number
81h
80h Protection Register Lock 2 1 0
AI05204
SRAM Component
The SRAM is an 4 Mbit asynchronous random ac-
cess memory which features a super low voltage
operation and low current consumption with an ac-
cess time of 70 ns in all conditions. The memory
operations can be performed using a single low
voltage supply, 2.7V to 3.3V, which is the same as
the Flash voltage supply.
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