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Número de pieza | M32000D4AFP | |
Descripción | CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON | |
Fabricantes | Tyco Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de M32000D4AFP (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF327/D
The RF Line
NPN Silicon
RF Power Transistor
MRF327
. . . designed primarily for wideband large–signal output amplifier stages in the
100 to 500 MHz frequency range.
• Guaranteed Performance @ 400 MHz, 28 Vdc
Output Power = 80 Watts over 225 to 400 MHz Band
Minimum Gain = 7.3 dB @ 400 MHz
• Built–In Matching Network for Broadband Operation Using Double Match
Technique
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Gold Metallization System for High Reliability Applications
• Characterized for 100 to 500 MHz
80 W, 100 to 500 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current — Peak
VCEO
VCBO
VEBO
IC
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
PD
Storage Temperature Range
THERMAL CHARACTERISTICS
Tstg
Characteristic
Thermal Resistance, Junction to Case
Value
33
60
4.0
9.0
12
250
1.43
–65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Symbol
RθJC
CASE 316–01, STYLE 1
Max Unit
0.7 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 80 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 80 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 8.0 mAdc, IC = 0)
Collector–Base Breakdown Voltage
(IC = 80 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ON CHARACTERISTICS
V(BR)CEO
33
—
— Vdc
V(BR)CES
60
—
— Vdc
V(BR)EBO
4.0
—
— Vdc
V(BR)CBO
60
—
— Vdc
ICBO — — 5.0 mAdc
DC Current Gain (IC = 4.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
hFE 20 — 80 —
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cob — 95 125 pF
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
REV 1
1
1 page PACKAGE DIMENSIONS
D
R
F
4
3
K
Q
J
E
1
2
L
B
H
A
C
N
U
CASE 316–01
ISSUE D
NOTES:
1. FLANGE IS ISOLATED IN ALL STYLES.
INCHES
DIM MIN MAX
A 24.38 25.14
B 12.45 12.95
C 5.97 7.62
D 5.33 5.58
E 2.16 3.04
F 5.08 5.33
H 18.29 18.54
J 0.10 0.15
K 10.29 11.17
L 3.81 4.06
N 3.81 4.31
Q 2.92 3.30
R 3.05 3.30
U 11.94 12.57
MILLIMETERS
MIN MAX
0.960 0.990
0.490 0.510
0.235 0.300
0.210 0.220
0.085 0.120
0.200 0.210
0.720 0.730
0.004 0.006
0.405 0.440
0.150 0.160
0.150 0.170
0.115 0.130
0.120 0.130
0.470 0.495
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. EMITTER
4. BASE
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 1
5
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PDF Descargar | [ Datasheet M32000D4AFP.PDF ] |
Número de pieza | Descripción | Fabricantes |
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