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PDF MCR08BT1 Data sheet ( Hoja de datos )
| Número de pieza | MCR08BT1 | |
| Descripción | SENSITIVE GATE SILICON CONTROLLED RECTIFIERS | |
| Fabricantes | ON | |
| Logotipo |  |
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MCR08B, MCR08M
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for line powered consumer applications
such as relay and lamp drivers, small motor controls, gate drivers for
larger thyristors, and sensing and detection circuits. Supplied in
surface mount package for use in automated manufacturing.
• Sensitive Gate Trigger Current
• Blocking Voltage to 600 Volts
• Glass Passivated Surface for Reliability and Uniformity
• Surface Mount Package
• Device Marking: MCR08BT1: CR08B; MCR08MT1: CR08M, and
Date Code
http://onsemi.com
SCRs
0.8 AMPERES RMS
200 thru 600 VOLTS
G
AK
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off–State Voltage(1)
(Sine Wave, RGK = 1000 Ω,
TJ = 25 to 110°C)
MCR08BT1
MCR08MT1
VDRM,
VRRM
200
600
Unit
Volts
On-State Current RMS
IT(RMS) 0.8 Amps
(All Conduction Angles; TC = 80°C)
Peak Non-repetitive Surge Current
(1/2 Cycle Sine Wave, 60 Hz,
TC = 25°C)
Circuit Fusing Considerations
(t = 8.3 ms)
ITSM
I2t
8.0 Amps
0.4 A2s
Forward Peak Gate Power
(TC = 80°C, t = 1.0 µs)
Average Gate Power
(TC = 80°C, t = 8.3 ms)
Operating Junction Temperature Range
PGM
PG(AV)
TJ
0.1
0.01
– 40 to
+110
Watts
Watts
°C
Storage Temperature Range
Tstg
– 40 to
°C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant source such that the voltage
ratings of the devices are exceeded.
4
12 3
SOT–223
CASE 318E
STYLE 10
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR08BT1
SOT223 16mm Tape and Reel
(1K/Reel)
MCR08MT1
SOT223 16mm Tape and Reel
(1K/Reel)
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 3
1
Publication Order Number:
MCR08BT1/D
1 page  
MCR08B, MCR08M
1.0
0.9
α
0.8 α = CONDUCTION
0.7 ANGLE
α = 30°
60°
0.6 90°
0.5
0.4 dc
0.3 180°
0.2 120°
0.1
0 0 0.1 0.2 0.3 0.4
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 8. Power Dissipation
0.5
0.7
1.0
0.1
0.01
0.0001 0.001
0.01 0.1 1.0
t, TIME (SECONDS)
10
100
Figure 9. Thermal Response Device
Mounted on Figure 1 Printed Circuit Board
2.0
VAK = 12 V
0.6 RL = 100 Ω
VAK = 12 V
RL = 3.0 kΩ
0.5 1.0
0.4
0.3–40 –20
0 20 40 60 80
TJ, JUNCTION TEMPERATURE, (°C)
0
110 –40 –20 0 20 40 60 80
TJ, JUNCTION TEMPERATURE, (°C)
110
Figure 10. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 11. Typical Normalized Holding Current
versus Junction Temperature
0.7
0.65
0.6
0.55
0.5
0.45
0.4
0.35
0.3
0.1
1000
VAK = 12 V
RL = 100 Ω
TJ = 25°C
100
10
RGK = 1000 Ω, RESISTOR
CURRENT INCLUDED
WITHOUT GATE RESISTOR
VAK = 12 V
RL = 100 Ω
1.0 10 100
IGT, GATE TRIGGER CURRENT (µA)
Figure 12. Typical Range of VGT
versus Measured IGT
1.0
1000 –40 –20
0 20 40 60 80
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Typical Gate Trigger Current
versus Junction Temperature
110
http://onsemi.com
5
5 Page 
Notes
MCR08B, MCR08M
http://onsemi.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MCR08BT1.PDF ] | |
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