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PDF T1400TA18A Data sheet ( Hoja de datos )
| Número de pieza | T1400TA18A | |
| Descripción | Insulared Gate Bi-polar Transistor | |
| Fabricantes | Westcode | |
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WESTCODE
Date:- 10 May, 2001
Data Sheet Issue:- 1
Insulated Gate Bi-polar Transistor
Type T1400TA18A
(capsule type)
Absolute Maximum Ratings
VCES
VGES
VOLTAGE RATINGS
Collector – emitter voltage (Note 1)
Peak gate – emitter voltage (Note 1)
MAXIMUM
LIMITS
1800
±20
UNITS
V
V
IC
ICRM
IF
IFRM
PMAX
Tj
Tstg
RATINGS
DC – Collector current, IGBT (Note 2)
Repetitive peak collector current, tp=1ms, IGBT (Note 2)
DC – Forward current, Diode
Repetitive peak forward current, tp=1ms, Diode
Maximum power dissipation, IGBT
Operating temperature range (Note 3)
Storage temperature range (Note 3)
Notes: -
1) Unless otherwise indicated Tj = 125ºC
2) TC = 90°C
3) For operation below –40°C or above 125°C please contact factory
MAXIMUM
LIMITS
1400
2800
1400
2800
6.6
-60 to +150
-60 to +150
UNITS
A
A
A
A
kW
°C
°C
Introduction
This rating report represents the outline specification for an Insulated gate bi-polar transistor (IGBT)
housed in a 75mm boss diameter hermetic cold weld capsule.
Data Sheet T1400TA18A Issue 1
Page 1 of 14
May, 2001
1 page  
WESTCODE Positive development in power electronics
T1400TA18A
16.0 Diode recovery characteristics
The figures given in the characteristic table are supplemented by curves 22 to 25. Curves are included for
maximum and typical recovered charge plus typical peak recovery current and recovery time against
commutation rate. All curves are given at the nominal operating current of 1400A.
17.0 Thermal and mechanical characteristics
Double and single side transient thermal impedance characteristics are included in figures 26 & 27 for the
IGBT & Diode respectively.
18.0 Handling Precautions
Precautions against electrostatic failure.
IGBT semiconductors are electrostatic-sensitive devices and require special handling techniques in
accordance with British Standard BS EN 100015-1 1992.
Data Sheet T1400TA18A Issue 1
Page 5 of 14
May, 2001
5 Page 
WESTCODE Positive development in power electronics
Figure 20 – Typical diode forward characteristic
10000
T1400TA18A
issue 1
T1400TA18A
Figure 21 – Maximum diode forward characteristic
10000
T1400TA18A
issue 1
1000
Tj=25°C
Tj=125°C
1000
Tj=25°C
Tj=125°C
100 100
10
0
123
Instantaneous forward voltage - VF (V)
4
Figure 22 – Typical recovered charge (50% chord)
1000
10
0
123
Instantaneous forward voltage - VF (V)
Figure 23 – Maximum recovered charge (50%
chord)
1000
IF=1400A
IF=1400A
Tj=125°C
4
Tj=25°C
Tj=125°C
100 Tj=25°C
10
100
T1400TA18A
issue 1
1000
Commutation rate - di/dt (A/µs)
10000
100
100
T1400TA18A
issue 1
1000
Commutation rate - di/dt (A/µs)
10000
Data Sheet T1400TA18A Issue 1
Page 11 of 14
May, 2001
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet T1400TA18A.PDF ] | |
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