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PDF M390S2858CT1 Data sheet ( Hoja de datos )

Número de pieza M390S2858CT1
Descripción SDRAM DIMM
Fabricantes Samsung 
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M390S2858CT1
PC133 Registered DIMM
M390S2858CT1 SDRAM DIMM
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD
GENERAL DESCRIPTION
The Samsung M390S2858CT1 is a 128M bit x 72 Synchro-
nous Dynamic RAM high density memory module. The Sam-
sung M390S2858CT1 consists of eighteen CMOS Stacked
128Mx4 bit Synchronous DRAMs in two TSOP-II 400mil pack-
ages, three 18-bits Drive ICs for input control signal, one PLL
in 24-pin TSSOP package for clock and one 2K EEPROM in 8-
pin TSSOP package for Serial Presence Detect on a 168-pin
glass-epoxy substrate. Two 0.22uF and one 0.0022uF decou-
pling capacitors are mounted on the printed circuit board in
parallel for each SDRAM. The M390S2858CT1 is a Dual In-
line Memory Module and is intented for mounting into 168-pin
edge connector sockets.
Synchronous design allows precise cycle control with the use
of system clock. I/O transactions are possible on every clock
cycle. Range of operating frequencies, programmable laten-
cies allows the same device to be useful for a variety of high
bandwidth, high performance memory system applications.
FEATURE
• Performance range
Part No.
M390S2858CT1-C7C
M390S2858CT1-C7A
Max Freq. (Speed)
133MHz(7.5ns @ CL=2)
133MHz (7.5ns @ CL=3)
• Burst mode operation
• Auto & self refresh capability (8192 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ± 0.3V power supply
• MRS cycle with address key programs
Latency (Access from column address)
Burst length (1, 2, 4 , 8 & Full page)
Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the
system clock
• Serial presence detect with EEPROM
• PCB : Height (1,700mil), double sided component
PIN CONFIGURATIONS (Front side/back side)
PIN NAMES
Pin Front Pin Front Pin Front Pin Back Pin Back Pin Back
Pin Name
Function
1 VSS 29 DQM1 57 DQ18 85 VSS 113 DQM5 141 DQ50
2 DQ0 30 CS0 58 DQ19 86 DQ32 114 CS1 142 DQ51
A0 ~ A12
BA0 ~ BA1
Address input (Multiplexed)
Select bank
3 DQ1 31 DU 59 VDD 87 DQ33 115 RAS 143 VDD
DQ0 ~ DQ63 Data input/output
4 DQ2 32 VSS 60 DQ20 88 DQ34 116 VSS 144 DQ52
5 DQ3 33 A0 61 NC 89 DQ35 117 A1 145 NC
6 VDD 34 A2 62 *VREF 90 VDD 118 A3 146 *VREF
7 DQ4 35 A4 63 *CKE1 91 DQ36 119 A5 147 REGE
CB0 ~ CB7
CLK0
CKE0
Check bit (Data-in/data-out)
Clock input
Clock enable input
8 DQ5 36 A6 64 VSS 92 DQ37 120 A7 148 VSS
CS0 ~ CS3 Chip select input
9 DQ6 37 A8 65 DQ21 93 DQ38 121 A9 149 DQ53
10 DQ7 38 A10/AP 66 DQ22 94 DQ39 122 BA0 150 DQ54
11 DQ8 39 BA1 67 DQ23 95 DQ40 123 A11 151 DQ55
RAS
CAS
Row address strobe
Colume address strobe
12 VSS 40 VDD 68 VSS 96 VSS 124 VDD 152 VSS
WE
Write enable
13 DQ9 41 VDD 69 DQ24 97 DQ41 125 *CLK1 153 DQ56
14 DQ10 42 CLK0 70 DQ25 98 DQ42 126 A12 154 DQ57
15 DQ11 43 VSS 71 DQ26 99 DQ43 127 VSS 155 DQ58
16 DQ12 44 DU 72 DQ27 100 DQ44 128 CKE0 156 DQ59
DQM0 ~ 7
VDD
VSS
DQM
Power supply (3.3V)
Ground
17 DQ13 45 CS2 73 VDD 101 DQ45 129 CS3 157 VDD
*VREF
Power supply for reference
18 VDD 46 DQM2 74 DQ28 102 VDD 130 DQM6 158 DQ60
19 DQ14 47 DQM3 75 DQ29 103 DQ46 131 DQM7 159 DQ61
20 DQ15 48 DU 76 DQ30 104 DQ47 132 *A13 160 DQ62
REGE
SDA
Register enable
Serial data I/O
21 CB0 49 VDD 77 DQ31 105 CB4 133 VDD 161 DQ63
SCL
Serial clock
22 CB1 50 NC 78 VSS 106 CB5 134 NC 162 VSS
23 VSS 51 NC 79 *CLK2 107 VSS 135 NC 163 *CLK3
24 NC 52 CB2 80 NC 108 NC 136 CB6 164 NC
25 NC 53 CB3 81 *WP 109 NC 137 CB7 165 **SA0
SA0 ~ 2
DU
NC
Address in EEPROM
Dont use
No connection
26 VDD 54 VSS 82 **SDA 110 VDD 138 VSS 166 **SA1
*WP
Write protection
27 WE 55 DQ16 83 **SCL 111 CAS 139 DQ48 167 **SA2
28 DQM0 56 DQ17 84 VDD 112 DQM4 140 DQ49 168 VDD
* These pins are not used in this module.
** These pins should be NC in the system
which does not support SPD.
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
REV. 0.1 Sept. 2001

1 page




M390S2858CT1 pdf
M390S2858CT1
PC133 Registered DIMM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
36
50
Unit
V
V
°C
W
mA
Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Symbol
VDD
VIH
VIL
VOH
VOL
ILI
Min
3.0
2.0
-0.3
2.4
-
-10
Typ Max Unit
3.3 3.6
V
3.0 VDDQ+0.3
V
0 0.8 V
- -V
- 0.4 V
- 10 uA
Notes : 1. VIH (max) = 5.6V AC. The overshoot voltage duration is 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is 3ns.
3. Any input 0V VIN VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Note
1
2
IOH = -2mA
IOL = 2mA
3
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)
Parameter
Symbol
Min
Input capacitance (A0 ~ A12)
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0)
Input capacitance (CLK0)
Input capacitance (CS0, CS2)
Input capacitance (DQM0 ~ DQM7)
Input capacitance (BA0 ~ BA1)
Data input/output capacitance (DQ0 ~ DQ63)
Data input/output capacitance (CB0 ~ CB7)
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
CIN7
COUT
COUT1
-
-
-
-
-
-
-
-
-
Max
15
15
15
20
15
15
15
22
22
Unit
pF
pF
pF
pF
pF
pF
pF
pF
pF
REV. 0.1 Sept. 2001

5 Page





M390S2858CT1 arduino
M390S2858CT1
M390S2858CT1-C7A/C7C
•Organization : 128MX72
•Composition : 128MX4 * 18ea
•Used component part # : K4S510632C-TC75/C7C
•# of banks in module : 2 Rows
•# of banks in component : 4 banks
•Feature : 1,700 mil height & double sided
•Refresh : 8K/64ms
Contents :
Byte #
Function described
0 # of bytes written into serial memory at module manufacturer
1 Total # of bytes of SPD memory device
2 Fundamental memory type
3 # of row address on this assembly
4 # of column address on this assembly
5 # of module Rows on this assembly
6 Data width of this assembly
7 ...... Data width of this assembly
8 Voltage interface standard of this assembly
9 SDRAM cycle time from clock @CAS latency of 3
10 SDRAM access time from clock @CAS latency of 3
11 DIMM configuration type
12 Refresh rate & type
13 Primary SDRAM width
14 Error checking SDRAM width
15 Minimum clock delay for back-to-back random column address
16 SDRAM device attributes : Burst lengths supported
17 SDRAM device attributes : # of banks on SDRAM device
18 SDRAM device attributes : CAS latency
19 SDRAM device attributes : CS latency
20 SDRAM device attributes : Write latency
21 SDRAM module attributes
22 SDRAM device attributes : General
23 SDRAM cycle time @CAS latency of 2
24 SDRAM access time @CAS latency of 2
25 SDRAM cycle time @CAS latency of 1
26 SDRAM access time @CAS latency of 1
27 Minimum row precharge time (=tRP)
28 Minimum row active to row active delay (tRRD)
29 Minimum RAS to CAS delay (=tRCD)
30 Minimum activate precharge time (=tRAS)
31 Module Row density
32 Command and Address signal input setup time
33 Command and Address signal input hold time
34 Data signal input setup time
PC133 Registered DIMM
Function Supported
-7C -7A
128bytes
256bytes (2K-bit)
SDRAM
13
11
2 Rows
72 bits
-
LVTTL
7.5ns
5.4ns
ECC
7.8us, support self refresh
x4
x4
tCCD = 1CLK
1, 2, 4, 8 & full page
4 banks
2&3
0 CLK
0 CLK
Registered/Buffered DQM,
address & control inputs and
On-card PLL
+/- 10% voltage tolerance,
Burst Read Single bit Write
precharge all, auto precharge
7.5ns
10ns
5.4ns
6ns
--
--
15ns
20ns
15ns
15ns
15ns
20ns
45ns
45ns
2 Rows of 512MB
1.5ns
0.8ns
1.5ns
Hex value
-7C -7A
80h
08h
04h
0Dh
0Bh
02h
48h
00h
01h
75h
54h
02h
82h
04h
04h
01h
8Fh
04h
06h
01h
01h
1Fh
Note
1
1
2
2
0Eh
75h A0h
54h 60h
00h 00h
00h 00h
0Fh 14h
0Fh 0Fh
0Fh 14h
2Dh 2Dh
80h
15h
08h
15h
2
2
2
2
REV. 0.1 Sept. 2001

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