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PDF MAT01 Data sheet ( Hoja de datos )

Número de pieza MAT01
Descripción Matched Monolithic Dual Transistor
Fabricantes Analog Devices 
Logotipo Analog Devices Logotipo



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No Preview Available ! MAT01 Hoja de datos, Descripción, Manual

a
FEATURES
Low VOS (VBE Match): 40 V typ, 100 V max
Low TCVOS: 0.5 V/؇C max
High hFE: 500 min
Excellent hFE Linearity from 10 nA to 10 mA
Low Noise Voltage: 0.23 V p-p—0.1 Hz to 10 Hz
High Breakdown: 45 V min
Available in Die Form
PRODUCT DESCRIPTION
The MAT01 is a monolithic dual NPN transistor. An exclusive
Silicon Nitride “Triple-Passivation” process provides excellent
stability of critical parameters over both temperature and time.
Matching characteristics include offset voltage of 40 µV, tem-
perature drift of 0.15 µV/°C, and hFE matching of 0.7%. Very
high hFE is provided over a six decade range of collector current,
including an exceptional hFE of 590 at a collector current of only
10 nA. The high gain at low collector current makes the
MAT01 ideal for use in low power, low level input stages.
Matched Monolithic
Dual Transistor
MAT01
PIN CONNECTION
TO-78
(H Suffix)
NOTE: Substrate is connected to case.
BURN-IN CIRCUIT
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700
World Wide Web Site: http://www.analog.com
Fax: 617/326-8703
© Analog Devices, Inc., 1997

1 page




MAT01 pdf
MAT01
Figure 1. Offset Voltage
vs. Temperature
Figure 4. Offset Voltage vs. Time
Figure 7. Base-Emitter Voltage
vs. Collector Current
Figure 2. Current Gain
vs. Collector Current
Figure 5. Current Gain
vs. Temperature
Figure 8. Saturation Voltage
vs. Collector Current
Figure 3. Noise Voltage
Figure 6. Noise Current Density
Figure 9. Gain-Bandwidth
vs. Collector Current
REV. A
–5–

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