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PDF MAC8SN Data sheet ( Hoja de datos )
| Número de pieza | MAC8SN | |
| Descripción | TRIACS 8 AMPERES RMS 400 THRU 800 VOLTS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MAC8SN (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MAC8S/D
Advance Information
TRIACS
Silicon Bidirectional Thyristors
MAC8S
SERIES
Designed for industrial and consumer applications for full wave control of ac
loads such as appliance controls, heater controls, motor controls, and other
power switching applications.
• Sensitive Gate Allows Triggering by Microcontrollers and other Logic
Circuits
• High Immunity to dv/dt — 25 V/ms Minimum at 110_C
• High Commutating di/dt — 8.0 A/ms Minimum at 110_C
• Minimum and Maximum Values of IGT, VGT and IH Specified for ease of
Design
• On-State Current Rating of 8 Amperes RMS at 70_C
• High Surge Current Capability — 70 Amperes
• Blocking Voltage to 800 Volts
• Rugged, Economical TO220AB Package
TRIACS
8 AMPERES RMS
400 THRU 800
VOLTS
MT2
MT1
MT2
G
CASE 221A–06
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Peak Repetitive Off-State Voltage (1)
(TJ = –40 to 110°C, Sine Wave, 50 to 60Hz, Gate Open)
On-State RMS Current
(Full Cycle Sine Wave, 60Hz, TJ = 70°C)
Peak Non-repetitive Surge Current
(One Half Cycle, 60Hz, TJ = 110°C)
Circuit Fusing Consideration
(t = 8.3 ms)
Peak Gate Power
(Pulse Width ≤ 1.0µs, TC = 70°C)
Average Gate Power
(t = 8.3ms, TC = 70°C)
Operating Junction Temperature Range
Storage Temperature Range
MAC8SD
MAC8SM
MAC8SN
Symbol
VDRM
IT(RMS)
ITSM
I2t
PGM
PG(AV)
TJ
Tstg
Value
400
600
800
8
70
20
16
0.35
– 40 to +110
– 40 to +150
Unit
Volts
A
A
A2sec
Watts
Watts
°C
°C
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
RθJC
RθJA
°C/W
2.2
62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds
TL
260 °C
(1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
REV 0
©MMoototorroollaa, ITnch.y1r9is95tor Device Data
1
Data Sheets
1 page  
MAC8S SERIES
100
VPK = 400V
90°C
10 100°C
tw
VDRM
1
f=
2 tw
(di/dt)c =
6f ITM
1000
110°C
1
1 5 10 15 20 25 30
(di/dt)c, CRITICAL RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 15.0 Critical Rate of Rise of
Commutating Voltage
400 VRMS
ADJUST FOR
ITM, 60 Hz VAC
TRIGGER
CHARGE
CHARGE
CONTROL
5 mF
NON-POLAR
CL
20 mHY
LL
MEASURE
I
1N4007
RS 15W
1N914 51
G
CS
2
1
0.01 mF
ADJUST FOR
dv/dt(c)
–
+
400 V
Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
Figure 16.0 Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage
Motorola Thyristor Device Data
5
Data Sheets
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MAC8SN.PDF ] | |
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