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PDF MAC6075B Data sheet ( Hoja de datos )

Número de pieza MAC6075B
Descripción TRIACs 4 AMPERES RMS 200 thru 600 VOLTS
Fabricantes Motorola Semiconductors 
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
Sensitive Gate Triggering (A and B versions) Uniquely Compatible for Direct
Coupling to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic
Functions
Gate Triggering 4 Mode — MAC6071A,B, MAC6073A,B, MAC6075A,B
Blocking Voltages to 600 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Order this document
by MAC6071/D
MAC6071A,B*
MAC6073A,B*
MAC6075A,B*
*Motorola preferred devices
TRIACs
4 AMPERES RMS
200 thru 600 VOLTS
MT1
MT2 G
MT2
G
MT2 MT1
CASE 77-08
(TO-225AA)
STYLE 5
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage(1)
(Gate Open, TJ = 25 to 110°C)
MAC6071A,B
MAC6073A,B
MAC6075A,B
VDRM
200
400
600
Volts
On-State Current RMS (TC = 85°C)
Peak Surge Current (One Full cycle, 60 Hz, TJ = –40 to +110°C)
Circuit Fusing Considerations (t = 8.3 ms)
IT(RMS)
ITSM
I2t
4
30
3.7
Amps
Amps
A2s
Peak Gate Power
Average Gate Power
Peak Gate Voltage
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque (6-32 Screw)(2)
PGM
PG(AV)
VGM
TJ
Tstg
10
0.5
5
–40 to +110
–40 to +150
8
Watts
Watt
Volts
°C
°C
in. lb.
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common.
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C, for 10 seconds.
Consult factory for lead bending options.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
© Motorola, Inc. 1996
1

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MAC6075B pdf
8.0
6.0
Q3
4.0
Q2
Q1
2.0
Q4
0
–40 –20
0 20 40 60 80
TJ, JUNCTION TEMPERATURE (°C)
100 110
Figure 7. Typical Gate Trigger Current versus
Junction Temperature
24
VPK = 400 V
TJ = 110°C
22
20
500 V
18
16
100 200
600 V
300 400 500 600 700 800
RGK, GATE–MT1 RESISTANCE (OHMS)
900 1000
Figure 9. Typical Exponential Static dv/dt
versus Gate–MT1 Resistance, MT2(+)
30
WRG–MT1 = 510
VPK = 400 V
25
20 500 V
600 V
15
10
100
105 110 115
TJ, JUNCTION TEMPERATURE (°C)
120
Figure 11. Typical Exponential Static dv/dt
versus Junction Temperature, MT2(+)
MAC6071A,B MAC6073A,B MAC6075A,B
0.9
0.8
0.7
0.6 Q3
Q1 Q2
Q4
0.5
0.4
0.3
–40 –20
0 20 40 60 80
TJ, JUNCTION TEMPERATURE (°C)
100 110
Figure 8. Typical Gate Trigger Voltage versus
Junction Temperature
W30
RG–MT1 = 510
TJ = 100°C
25
20 110°C
15
120°C
10
400
450 500 550
VPK, PEAK VOLTAGE (VOLTS)
600
Figure 10. Typical Exponential Static dv/dt
versus Peak Voltage, MT2(+)
11
TJ = 110°C
VPK = 400 V
10.5
10
500 V
9.5
600 V
9.0
100 200
300 400 500 600 700 800
RGK, GATE–MT1 RESISTANCE (OHMS)
900 1000
Figure 12. Typical Exponential Static dv/dt
versus Gate–MT1 Resistance, MT2(–)
Motorola Thyristor Device Data
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