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PDF MAC4DSN Data sheet ( Hoja de datos )
| Número de pieza | MAC4DSN | |
| Descripción | TRIACS 4.0 AMPERES RMS 600 thru 800 VOLTS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MAC4DSN (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MAC4DSM/D
TRIACS
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer applications
such as motor control; process control; temperature, light and speed control.
• Small Size Surface Mount DPAK Package
• Passivated Die for Reliability and Uniformity
• Blocking Voltage to 800 V
• On–State Current Rating of 4.0 Amperes RMS at 108°C
• Low IGT — 10 mA Maximum in 3 Quadrants
• High Immunity to dv/dt — 50 V/ms at 125°C
ORDERING INFORMATION
G
• To Obtain “DPAK” in Surface Mount Leadform (Case 369A)
Shipped in Sleeves — No Suffix, i.e. MAC4DSN
Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,
i.e. MAC4DSNT4
• To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —
Add “–1” Suffix to Device Number, i.e. MAC4DSN–1
MT2
MT1
MAC4DSM
MAC4DSN
Motorola Preferred Devices
TRIACS
4.0 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
MT2 G
CASE 369A–13
STYLE 6
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage (1)
(TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
MAC4DSM
MAC4DSN
Symbol
VDRM
Value
600
800
Unit
Volts
On–State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 108°C)
Peak Non–Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 msec)
IT(RMS)
ITSM
I2t
Amps
4.0
40
6.6 A2sec
Peak Gate Power
(Pulse Width ≤ 10 msec, TC = 108°C)
Average Gate Power
(t = 8.3 msec, TC = 108°C)
Peak Gate Current (Pulse Width ≤ 10 msec, TC = 108°C)
Peak Gate Voltage (Pulse Width ≤ 10 msec, TC = 108°C)
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGM
VGM
TJ
Tstg
0.5
0.1
0.2
5.0
–40 to 125
–40 to 150
Watts
Amps
Volts
°C
Characteristic
Symbol
Max Unit
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (2)
RqJC
RqJA
RqJA
3.5 °C/W
88
80
Maximum Lead Temperature for Soldering Purposes (3)
TL 260 °C
(1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
(2) Surface mounted on minimum recommended pad size.
(3) 1/8″ from case for 10 seconds.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
© Motorola, Inc. 1997
1
1 page  
800
600 VPK = 400 V
GATE OPEN
400
600 V
200
800 V
0
100
105 110 115 120
TJ, JUNCTION TEMPERATURE (°C)
125
Figure 13. Typical Exponential Static dv/dt
versus Junction Temperature, MT2(+)
MAC4DSM MAC4DSN
1600
1400
1200 VPK = 400 V
GATE OPEN
1000
800
600 V
600
400
200
800 V
0
100 105 110 115 120
TJ, JUNCTION TEMPERATURE (°C)
125
Figure 14. Typical Exponential Static dv/dt
versus Junction Temperature, MT2(–)
100
VPK = 400 V
TJ = 125°C 100°C
75°C
10
tw
VDRM
1
f=
2 tw
(di/dt)c
=
6f ITM
1000
1.0
0 5.0 10 15 20
di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 15. Critical Rate of Rise of
Commutating Voltage
Motorola Thyristor Device Data
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MAC4DSN.PDF ] | |
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