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PDF MAC320-6FP Data sheet ( Hoja de datos )

Número de pieza MAC320-6FP
Descripción ISOLATED TRIACs THYRISTORS 20 AMPERES RMS 200 thru 800 VOLTS
Fabricantes Motorola Semiconductors 
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC320FP Series) or
Four Modes (MAC320AFP Series)
Order this document
by MAC320FP/D
MAC320FP
Series
MAC320AFP
Series
ISOLATED TRIACs
THYRISTORS
20 AMPERES RMS
200 thru 800 VOLTS
MT2 MT1
G
CASE 221C-02
STYLE 3
MAXIMUM RATINGS (TC = 25°C unless otherwise noted.)
Rating
Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC320-4FP, MAC320A4FP
MAC320-6FP, MAC320A6FP
MAC320-8FP, MAC320A8FP
MAC320-10FP, MAC320A10FP
Symbol
VDRM
Value
200
400
600
800
Unit
Volts
Peak Gate Voltage
On-State RMS Current (TC = +75°C, Full Cycle Sine Wave 50 to 60 Hz)(2)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +75°C,
preceded and followed by rated current)
VGM
IT(RMS)
ITSM
10
20
150
Volts
Amps
Amps
Peak Gate Power (TC = +75°C, Pulse Width = 2 µs)
Average Gate Power (TC = +75°C, t = 8.3 ms)
Peak Gate Current
pRMS Isolation Voltage (TA = 25°C, Relative Humidity 20%)
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGM
V(ISO)
TJ
Tstg
20
0.5
2
1500
–40 to +125
–40 to +150
Watts
Watt
Amps
Volts
°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 1.8 °C/W
Thermal Resistance, Case to Sink
RθCS
2.2 (typ)
°C/W
Thermal Resistance, Junction to Ambient
RθJA 60 °C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the
plastic body.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1

1 page




MAC320-6FP pdf
MAC320FP Series MAC320AFP Series
PACKAGE DIMENSIONS
–B–
P
–T–
SEATING
PLANE
FC
S
N
H
–Y–
Q
Z
G
1 23
A
E
K
LJ
D 3 PL
0.25 (0.010) M B M Y
R
STYLE 3:
PIN 1.
2.
3.
MT 1
MT 2
GATE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
INCHES
DIM MIN MAX
A 0.680 0.700
B 0.388 0.408
C 0.175 0.195
D 0.025 0.040
E 0.340 0.355
F 0.140 0.150
G 0.100 BSC
H 0.110 0.155
J 0.018 0.028
K 0.500 0.550
L 0.045 0.070
N 0.049 –––
P 0.270 0.290
Q 0.480 0.500
R 0.090 0.120
S 0.105 0.115
Z 0.070 0.090
MILLIMETERS
MIN MAX
17.28 17.78
9.86 10.36
4.45 4.95
0.64 1.01
8.64 9.01
3.56 3.81
2.54 BSC
2.80 3.93
0.46 0.71
12.70 13.97
1.15 1.77
1.25 –––
6.86 7.36
12.20 12.70
2.29 3.04
2.67 2.92
1.78 2.28
CASE 221C-02
Motorola Thyristor Device Data
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