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PDF MAC08DT1 Data sheet ( Hoja de datos )

Número de pieza MAC08DT1
Descripción TRIAC 0.8 AMPERE RMS 200 thru 600 Volts
Fabricantes Motorola Semiconductors 
Logotipo Motorola Semiconductors Logotipo



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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
SOTĆ223 Triac
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and other light
industrial or consumer applications. Supplied in surface mount package for use in
automated manufacturing.
Sensitive Gate Trigger Current in Four Trigger Modes
Blocking Voltage to 600 Volts
Glass Passivated Surface for Reliability and Uniformity
Surface Mount Package
Devices Supplied on 1 K Reel
MAC08BT1
Series *
*Motorola preferred devices
TRIAC
0.8 AMPERE RMS
200 thru 600 Volts
CASE 318E-04
(SOT-223)
STYLE 11
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Blocking Voltage(1)
(1/2 Sine Wave, Gate Open, TJ = 25 to 110°C)
MAC08BT1
MAC08DT1
MAC08MT1
Symbol
VDRM
Value
200
400
600
Unit
Volts
On-State Current RMS (TC = 80°C)
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = 25°C)
Circuit Fusing Considerations (t = 8.3 ms)
Peak Gate Power (t < 2.0 µs)
Average Gate Power (TC = 80°C, t = 8.3 ms)
Operating Junction Temperature Range
Storage Temperature Range
Maximum Device Temperature for Soldering Purposes (for 5 Seconds Maximum)
THERMAL CHARACTERISTICS
IT(RMS)
ITSM
I2t
PGM
PG(AV)
TJ
Tstg
TL
0.8
10
0.4
5.0
0.1
–40 to +110
–40 to +150
260
Amps
Amps
A2s
Watts
Watts
°C
°C
°C
Characteristic
Symbol Max Unit
Thermal Resistance, Junction to Ambient
PCB Mounted per Figure 1
RθJA
156 °C/W
Thermal Resistance, Junction to Tab
Measured on Anode Tab Adjacent to Epoxy
RθJT
25 °C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
3–40
Motorola Thyristor Device Data

1 page




MAC08DT1 pdf
MAC08BT1 Series
60
50
40
MAIN TERMINAL #2
POSITIVE
600 Vpk
TJ = 110°C
10
IGT3
IGT2
IGT1
1.0
IGT4
30 MAIN TERMINAL #1
POSITIVE
20
10 100 1000 10,000
RG, GATE – MAIN TERMINAL 1 RESISTANCE (OHMS)
Figure 13. Exponential Static dv/dt versus
Gate – Main Terminal 1 Resistance
0.1
–40 –20
0 20 40 60 80
TJ, JUNCTION TEMPERATURE (°C)
100
Figure 14. Typical Gate Trigger Current Variation
6.0
5.0
4.0 MAIN TERMINAL #2
POSITIVE
3.0
2.0 MAIN TERMINAL #1
POSITIVE
1.0
0
–40
–20
0 20 40 60 80
TJ, JUNCTION TEMPERATURE (°C)
100
Figure 15. Typical Holding Current Variation
1.1
VGT2
VGT3
VGT4
VGT1
0.3
–40
–20 0 20 40 60 80 100
TJ, JUNCTION TEMPERATURE (°C)
Figure 16. Gate Trigger Voltage Variation
3–44
Motorola Thyristor Device Data

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