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Número de pieza | MA9264 | |
Descripción | Radiation Hard 8192x8 Bit Static RAM | |
Fabricantes | Dynex | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MA9264 (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
No Preview Available ! Replaces June 1999 version, DS3692-6.0
MAM9A2926644
Radiation Hard 8192x8 Bit Static RAM
DS3692-7.0 January 2000
The MA9264 64k Static RAM is configured as 8192x8 bits and
manufactured using CMOS-SOS high performance, radiation hard,
1.5µm technology.
The design uses a 6 transistor cell and has full static operation with
no clock or timing strobe required. Address input buffers are deselected
when chip select is in the HIGH state.
See Application Note “Overview of the Dynex Semiconductor
Radiation Hard 1.5µm CMOS/SOS SRAM Range”.
Operation Mode CS CE OE WE I/O Power
Read
Write
Output Disable
L H L H D OUT
L H X L D IN
L H H H High Z
ISB1
Standby
H X X X High Z
X L XX
X
ISB2
FEATURES
s 1.5µm CMOS-SOS Technology
s Latch-up Free
s Fast Access Time 70ns Typical
s Total Dose 106 Rad(Si)
s Transient Upset >1011 Rad(Si)/sec
s SEU 4.3 x 10-11 Errors/bitday
s Single 5V Supply
s Three State Output
s Low Standby Current 100µA Typical
s -55°C to +125°C Operation
s All Inputs and Outputs Fully TTL or CMOS
Compatible
s Fully Static Operation
Figure 1: Truth Table
A12 A
DR
A9 D O
A8
RW
E
A4
S
S
D
A3 E
BC
A6
UO
FD
A5 F E
ER
A7 R
CS
CE
WE
OE
A10 A0 A1 A2 A11
Figure 2: Block Diagram
1/15
1 page Symbol Parameter
Conditions
Min.
Typ.
Max. Units
CIN
C
OUT
Input Capacitance
Output Capacitance
Vl = 0V
V = 0V
I/O
- 3 5 pF
- 5 7 pF
Note: TA = 25°C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured.
Figure 8: Capacitance
Symbol
FT
Parameter
Basic Functionality
Conditions
VDD = 4.5V - 5.5V, FREQ = 1MHz
VIL = VSS, VIH = VDD, VOL ≤ 1.5V, VOH ≥ 1.5V
TEMP = -55°C to +125°C, GPS PATTERN SET
GROUP A SUBGROUPS 7, 8A, 8B
Figure 9: Functionality
Subgroup
1
2
3
7
8A
8B
9
10
11
Definition
Static characteristics specified in Tables 4 and 5 at +25°C
Static characteristics specified in Tables 4 and 5 at +125°C
Static characteristics specified in Tables 4 and 5 at -55°C
Functional characteristics specified in Table 9 at +25°C
Functional characteristics specified in Table 9 at +125°C
Functional characteristics specified in Table 9 at -55°C
Switching characteristics specified in Tables 6 and 7 at +25°C
Switching characteristics specified in Tables 6 and 7 at +125°C
Switching characteristics specified in Tables 6 and 7 at -55°C
Figure 10: Definition of Subgroups
MA9264
5/15
5 Page OUTLINES AND PIN ASSIGNMENTS
MA9264
D
14 1
15
A
28
W
Seating Plane
A1
ME
HC
e1
e b Z 15°
Ref
A
A1
b
c
D
e
e1
H
Me
Z
W
XG404
Min.
-
0.38
0.35
0.20
-
-
-
4.71
-
-
-
Millimetres
Nom.
-
-
-
-
-
2.54 Typ.
15.24 Typ.
-
-
-
-
Max.
5.715
1.53
0.59
0.36
36.02
-
-
5.38
15.90
1.27
1.53
Min.
-
0.015
0.014
0.008
-
-
-
0.185
-
-
-
Inches
Nom.
-
-
-
-
-
0.100 Typ.
0.600 Typ.
-
-
-
-
Max.
0.225
0.060
0.023
0.014
1.418
-
-
0.212
0.626
0.050
0.060
NC 1
A12 2
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
D/Q0 11
D/Q1 12
D/Q2 13
GND 14
Top
View
28 VCC
27 W
26 CE
25 A8
24 A9
23 A11
22 OE
21 A10
20 CS
19 D/Q7
18 D/Q6
17 D/Q5
16 D/Q4
15 D/Q3
Figure 13: 28-Lead Ceramic DIL (Solder Seal) - Package Style C
11/15
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet MA9264.PDF ] |
Número de pieza | Descripción | Fabricantes |
MA9264 | Radiation Hard 8192x8 Bit Static RAM | Dynex |
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