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PDF MA718 Data sheet ( Hoja de datos )

Número de pieza MA718
Descripción Silicon epitaxial planar type
Fabricantes Panasonic 
Logotipo Panasonic Logotipo



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No Preview Available ! MA718 Hoja de datos, Descripción, Manual

Schottky Barrier Diodes (SBD)
MA6X718
Silicon epitaxial planar type
For switching circuits
For wave detection circuit
I Features
Three MA3X704As in the same direction are contained in one
package
Optimum for low-voltage rectification because of its low forward
rise voltage (VF)
Optimum for high-frequency rectification because of its short re-
verse recovery time (trr)
0.65 ± 0.15
6
5
4
2.8
+ 0.2
0.3
1.5
+ 0.25
0.05
Unit : mm
0.65 ± 0.15
1
2
3
0.1 to 0.3
0.4 ± 0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak forward current*
Forward current (DC)*
Junction temperature
Storage temperature
VR 30
IFM 150
IF 30
Tj 125
Tstg 55 to +125
Note) * : Value in per diode
Unit
V
mA
mA
°C
°C
1 : Cathode 1 4 : Anode 3
2 : Cathode 2 5 : Anode 2
3 : Cathode 3 6 : Anode 1
Mini Type Package (6-pin)
Marking Symbol: M2N
Internal Connection
61
52
43
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 30 V
VF1 IF = 1 mA
VF2 IF = 30 mA
Ct VR = 1 V, f = 1 MHz
trr IF = IR = 10 mA
Irr = 1 mA, RL = 100
1
0.4
1.0
1.5
1.0
µA
V
V
pF
ns
Detection efficiency
η Vin = 3 V(peak), f = 30 MHz
RL = 3.9 k, CL = 10 pF
65 %
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3.
*:
trr
measuring
instrument
Bias
Application
Unit
N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50
W.F.Analyzer
(SAS-8130)
Ri = 50
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100
1

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