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PDF MA6X128 Data sheet ( Hoja de datos )
| Número de pieza | MA6X128 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Switching Diodes
MA6X128
Silicon epitaxial planar type
For switching circuits
I Features
• Four-element contained in one package, allowing high-density
mounting
• Centrosymmetrical wiring, allowing to free from the taping direc-
tion
• The mirror image wiring of (MA6X123)
• Short reverse recovery time trr
• Small terminal capacitance, Ct
• High breakdown voltage (VR = 80 V)
0.65 ± 0.15
6
5
4
2.8
+ 0.2
− 0.3
1.5
+ 0.25
− 0.05
Unit : mm
0.65 ± 0.15
1
2
3
0.1 to 0.3
0.4 ± 0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)*1
Peak forward current*1
Non-repetitive peak forward
surge current*1,2
VR
VRM
IF
IFM
IFSM
80
80
100
225
500
Junction temperature
Storage temperature
Note) *1 : Value for single diode
*2 : t = 1 s
Tj
Tstg
150
−55 to +150
Unit
V
V
mA
mA
mA
°C
°C
1 : Cathode 3,4 4 : Cathode 1,2
2 : Anode 1
5 : Anode 3
3 : Anode 2
6 : Anode 4
Mini Type Package (6-pin)
Marking Symbol: M2V
Internal Connection
61
52
43
I Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*
Symbol
IR
VF
VR
Ct
trr
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Conditions
VR = 75 V
IF = 100 mA
IR = 100 µA
VR = 0 V, f = 1 MHz
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
Min Typ Max Unit
100 nA
1.2 V
80 V
2 pF
3 ns
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA6X128.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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| MA6X124 | Silicon epitaxial planar type | Panasonic |
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