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PDF MA6X078 Data sheet ( Hoja de datos )
| Número de pieza | MA6X078 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Band Switching Diodes
MA6X078 (MA78)
Silicon epitaxial planar type
For band switching
I Features
• Non connected three elements incorporated in one package
• Low forward dynamic resistance rf
• Less voltage dependence of diode capacitance CD
• Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
456
32
0.30+–00..0150
0.50+–00..0150
10°
1
Unit : mm
0.16+–00..0160
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Forward current (DC)
Operating ambient temperature*
Storage temperature
VR 35
IF 100
Topr −25 to +85
Tstg −55 to +150
Note) * : Maximum ambient temperature during operation
Unit
V
mA
°C
°C
1 : Cathode 1 4 : Anode 3
2 : Cathode 2 5 : Anode 2
3 : Cathode 3 6 : Anode 1
Mini6-G1 Package
Marking Symbol: M2L
Internal Connection
61
52
43
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max
Reverse current (DC)
Forward voltage (DC)
Diode capacitance
Forward dynamic resistance*
IR VR = 33 V
VF IF = 100 mA
CD VR = 6 V, f = 1 MHz
rf IF = 2 mA, f = 100 MHz
0.01 100
0.92 1
0.9 1.2
0.65 0.85
Note) 1. Each characteristic is a standard for individual diodes
2. Rated input/output frequency: 100 MHz
3. * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
Unit
nA
V
pF
Ω
Note) The part number in the parenthesis shows conventional part number.
243
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MA6X078.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MA6X078 | Silicon epitaxial planar type | Panasonic |
| MA6X078 | Band Switching Diodes | Panasonic |
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