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PDF MA6S718 Data sheet ( Hoja de datos )

Número de pieza MA6S718
Descripción Silicon epitaxial planar type
Fabricantes Panasonic 
Logotipo Panasonic Logotipo



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No Preview Available ! MA6S718 Hoja de datos, Descripción, Manual

Schottky Barrier Diodes (SBD)
MA6S718
Silicon epitaxial planar type
For switching circuits
I Features
Small S-mini type 6-pin package
Non connected three elements incorporated in one package,
allowing high-density mounting
Flat lead type package, resulting in promotion of the actual
mounting ratio and solderability with a high-speed mounter
Optimum for low-voltage rectification because of its low forward
rise voltage (VF)
Optimum for high-frequency rectification because of its short re-
verse recovery time (trr)
2.1 ± 0.1
1.25 ± 0.1
16
25
34
Unit : mm
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Peak forward current*
Forward current (DC)*
Junction temperature
Storage temperature
VR
VRM
IFM
IF
Tj
Tstg
30
30
150
30
125
55 to +125
Note) * : Value in per diode
Unit
V
V
mA
mA
°C
°C
1 : Anode 1 4 : Cathode 3
2 : Anode 2 5 : Cathode 2
3 : Anode 3 6 : Cathode 1
S-Mini Type Package (6-pin)
Marking Symbol: M2N
Internal Connection
16
25
34
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 30 V
VF1 IF = 1 mA
VF2 IF = 30 mA
Ct VR = 1 V, f = 1 MHz
trr IF = IR = 10 mA
Irr = 1 mA, RL = 100
1
0.4
1
1.5
1
µA
V
V
pF
ns
Detection efficiency
η Vin = 3 V(peak), f = 30 MHz
RL = 3.9 k, CL = 10 pF
65 %
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument Bias Applicaiton Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50
W.F.Analyzer
(SAS-8130)
Ri = 50
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100
1

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