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PDF MA5114 Data sheet ( Hoja de datos )
| Número de pieza | MA5114 | |
| Descripción | Radiation hard 1024x4 Bit Static RAM | |
| Fabricantes | Dynex | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MA5114 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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MA5114
MA5114
Radiation hard 1024x4 Bit Static RAM
Replaces June 1999 version, DS3591-4.0
DS3591-5.0 January 2000
The MA5114 4k Static RAM is configured as 1024 x 4 bits and
manufactured using CMOS-SOS high performance, radiation hard,
3µm technology.
The design uses a 6 transistor cell and has full static operation with
no clock or timing strobe required. Address input buffers are deselected
when Chip Select is in the HIGH state.
Operation Mode CS WE I/O
Power
Read
Write
Standby
L H D OUT
L L D IN
H X High Z
ISB1
ISB2
Figure 1: Truth Table
FEATURES
s 3µm CMOS-SOS Technology
s Latch-up Free
s Fast Access Time 90ns Typical
s Total Dose 106 Rad(Si)
s Transient Upset >1010 Rad(Si)/sec
s SEU <10-10 Errors/bitday
s Single 5V Supply
s Three State Output
s Low Standby Current 50µA Typical
s -55°C to +125°C Operation
s All Inputs and Outputs Fully TTL or CMOS
Compatible
s Fully Static Operation
s Data Retention at 2V Supply
Figure 2: Block Diagram
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1 page  
TIMING DIAGRAMS
ADDRESS
CS
TAVAVR
TAVQV
TELQV
TELQX
TAXQX
DATA OUT
HIGH
IMPEDANCE
DATA VALID
1. WE is high for Read Cycle.
2. Address Vaild prior to or coincident with CS transition low.
Figure 11a: Read Cycle 1
TEHQZ
MA5114
ADDRESS
DATA OUT
TAVAVR
TAVQV
TAXQX
DATA VALID
1. WE is high for Read Cycle.
2. Device is continually selected. CS low.
Figure 11b: Read Cycle 2
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5 Page 
MA5114
RADIATION TOLERANCE
Total Dose Radiation Testing
For product procured to guaranteed total dose radiation
levels, each wafer lot will be approved when all sample
devices from each lot pass the total dose radiation test.
The sample devices will be subjected to the total dose
radiation level (Cobalt-60 Source), defined by the ordering
code, and must continue to meet the electrical parameters
specified in the data sheet. Electrical tests, pre and post
irradiation, will be read and recorded.
GEC Plessey Semiconductors can provide radiation
testing compliant with MIL-STD-883 test method 1019,
Ionizing Radiation (Total Dose).
Total Dose (Function to specification)*
1x105 Rad(Si)
Transient Upset (Stored data loss)
5x1010 Rad(Si)/sec
Transient Upset (Survivability)
>1x1012 Rad(Si)/sec
Neutron Hardness (Function to specification) >1x1015 n/cm2
Single Event Upset**
3.4x10-9 Errors/bit day
Latch Up
Not possible
* Other total dose radiation levels available on request
** Worst case galactic cosmic ray upset - interplanetary/high altitude orbit
Figure 17: Radiation Hardness Parameters
SINGLE EVENT UPSET CHARACTERISTICS
UPSET BIT
CROSS-SECTION
(cm2/bit)
Ion LET (MeV.cm2/mg)
Figure 18: Typical Per-Bit Upset Cross-Section vs Ion LET
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MA5114.PDF ] | |
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