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PDF MA4ZD14 Data sheet ( Hoja de datos )
| Número de pieza | MA4ZD14 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Schottky Barrier Diodes (SBD)
MA4ZD14
Silicon epitaxial planar type
For high-speed switching circuits
I Features
• S-mini type 4-pin package
• Low forward rise voltage VF (VF < 0.4 V)
• Allowing high-density mounting
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse voltage
Forward current
(DC)
Single
Double*1
VR
VRRM
IF
20
20
100
75
V
V
mA
Peak forward
Single
IFM
300
mA
current
Double*1
225
Non-repetitive peak Single
forward surge current*2 Double*1
IFSM
1
0.75
A
Junction temperature
Tj 125 °C
Storage temperature
Tstg −55 to +125
°C
Note) *1 : Value per chip
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
2.1 ± 0.1
1.25 ± 0.1
Unit : mm
14
23
1 : Anode 1
2 : Anode 2
3 : Cathode 2
4 : Cathode 1
S-Mini Type Package (4-pin)
Marking Symbol: M5D
Internal Connection
14
23
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 10 V
VF1 IF = 5 mA
VF2 IF = 100 mA
Ct VR = 0 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
20
0.27
0.40
25
3
µA
V
V
pF
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA4ZD14.PDF ] | |
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