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Número de pieza | MA4X746 | |
Descripción | Silicon epitaxial planar type | |
Fabricantes | Panasonic | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MA4X746 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Schottky Barrier Diodes (SBD)
MA4X746
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
0.65 ± 0.15
+ 0.2
2.8 − 0.3
1.5
+
−
0.25
0.05
Unit : mm
0.65 ± 0.15
I Features
• IF(AV) = 200 mA, and VR > 50 V is achieved
• Allowing automatic insertion with the emboss taping
• Optimum for high-frequency rectification because of its short
reverse recovery time (trr)
• High rectification efficiency caused by its low forward-rise-
voltage (VF)
0.5 R
41
2
3
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Repetitive peak reverse voltage
Non repetitive peak Single
forward current*2 Double*1
VR
VRRM
IFSM
50
50
1
0.75
Peak forward
current
Single
Double*1
IFM
300
225
Unit
V
V
A
mA
0.1 to 0.3
0.4 ± 0.2
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Mini Type Package (4-pin)
Marking Symbol: M3M
Internal Connection
Average forward Single
current
Double*1
IF(AV)
200
150
mA
41
Junction temperature
Storage temperature
Tj 150
Tstg −55 to +150
°C
°C
32
Note) *1 : Value per chip
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 50 V
VF1 IF = 30 mA
VF2 IF = 200 mA
Ct VR = 0 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
200
0.36
0.55
30
3.0
µA
V
V
pF
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tr tp
10%
t
Output Pulse
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MA4X746.PDF ] |
Número de pieza | Descripción | Fabricantes |
MA4X746 | Silicon epitaxial planar type | Panasonic |
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