|
|
PDF MA4X726 Data sheet ( Hoja de datos )
| Número de pieza | MA4X726 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MA4X726 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
Schottky Barrier Diodes (SBD)
MA4X726
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
I Features
• Two MA3X721s are contained in one package
(two diodes in a different direction)
• Allowing to rectify under (IF(AV) = 200 mA) condition
• High reliability
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse voltage
Peak forward
current
Single
Double*1
VR
VRRM
IFM
30
30
300
225
V
V
mA
Average forward Single
current
Double*1
IF(AV)
200
150
mA
Non-repetitive peak Single
forward surge current*2 Double*1
IFSM
1
0.75
A
Junction temperature
Storage temperature
Tj 150
Tstg −55 to +150
°C
°C
Note) *1 : Value per chip
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
0.65 ± 0.15
2.8
+
−
0.2
0.3
1.5
+
−
0.25
0.05
Unit : mm
0.65 ± 0.15
0.5 R
41
2
3
0.1 to 0.3
0.4 ± 0.2
1 : Cathode 1
2 : Anode 2
3 : Cathode 2
4 : Anode 1
Mini Type Package (4-pin)
Marking Symbol: M1O
Internal Connection
41
32
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 30 V
VF IF = 200 mA
Ct VR = 0 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
50
0.55
30
3.0
µA
V
pF
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 1 000 MHz
3. * : trr measuring instrument
Bias Applicaiton Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA4X726.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MA4X724 | Silicon epitaxial planar type | Panasonic |
| MA4X724 | Schottky Barrier Diodes (SBD) | Panasonic |
| MA4X726 | Silicon epitaxial planar type | Panasonic |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |