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PDF MA4S159 Data sheet ( Hoja de datos )
| Número de pieza | MA4S159 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Switching Diodes
MA4S159
Silicon epitaxial planar type
For switching circuits
2.1 ± 0.1
1.25 ± 0.1
Unit : mm
I Features
• Small S-mini type 4-pin package
• Two isolated elements contained in one package, allowing high-
density mounting
• Flat lead type, resulting in improved mounting efficiency and
solderability with the high-speed mounting machine
• Short reverse recovery time trr
• Small terminal capacitance, Ct
14
23
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Average forward Single
current
Double
VR
VRM
IF(AV)
80
80
100
75
Peak forward
current
Single
Double
IFM
225
170
Non-repetitive peak Single
forward surge current* Double
IFSM
500
375
Junction temperature
Storage temperature
Tj 150
Tstg −55 to +150
Note) * : t = 1 s
Unit
V
V
mA
mA
mA
°C
°C
1 : Anode 1
2 : Anode 2
3 : Cathode 2
4 : Cathode 1
S-Mini Type Package (4-pin)
Marking Symbol: M1B
Internal Connection
14
23
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 75 V
VF IF = 100 mA
VR IR = 100 µA
Ct VR = 0 V, f = 1 MHz
trr IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tr tp
10%
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Min Typ Max
0.1
0.95 1.2
80
0.9 2
3
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
Unit
µA
V
V
pF
ns
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA4S159.PDF ] | |
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