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Número de pieza MA4BPS201
Descripción PIN Diode Chips with Offset Bond Pads
Fabricantes Tyco 
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PIN Diode Chips With Offset Bond Pads
MA4BPS101, MA4BPS201, MA4BPS301
MA4BPS101, MA4BPS201, MA4BPS301
PIN Diode Chips with
Offset Bond Pads
Features
Bond Pads Removed From Active Junction
Large Bond Pads Support Multiple Bond Wires
Rugged Silicon-Glass Construction
Silicon Nitride Passivation
Polyimide Scratch Protection
Description
These silicon - glass PIN diode chips are fabricated with
M/A-COM’s patented HMIC™ process. They contain a single
shunt silicon PIN diode embedded in a glass substrate with dual
75 x 150 micron bond pads located near the chip edges. The large
pads allow use of multiple bond wires. The location of these pads
on a glass substrate results in low parasitic capacitance. The
diode junction is passivated with silicon nitride and a layer of
polyimide has been added for scratch protection during assembly.
The devices are available on industry standard tape frame for
automatic insertion and assembly in high volume applications.
Applications
These diodes are designed for use as general PIN elements in
switches and switched pad attenuators. The chips can handle up
to 10 watts of RF power, and are well suited for use in T/R
switches for subscriber phones, particularly the higher power and
higher frequency systems for satellite based systems. They are
also useful for the switching element in phased array radar appli-
cations. The larger bond pad allows for two (2) 1 mil dia contact
wires which reduces the bond wire inductance almost in half.
Chip Layout
Absolute Maximum Rating1
Parameter
Operating Temperature
Storage Temperature
Forward Current
Reverse Voltage
Incident RF Power
Mounting Temperature
Absolute Maximum
-60°C to +150°C
-65°C to +175°C
100mA
70 V
+40 dBm (CW)
+320°C for 10 seconds
1. Exceeding these limits may cause permanent damage.
Electrical Specifications @ +25°C
Parameters
Symbol Units Test Conditions
Total Capacitance
Series Resistance1
CT pF -5 Volts at 1 MHz
Rs +10 mA at 1 GHz
Parallel Resistance2 Rp K0 Volts at 1 GHz
Breakdown Voltage
Vb Volts
-10 uA
Carrier Lifetime2
TL nS +10mA/-6mA
Thermal Impedance2 θjc °C/W 1A/.01A, 10 mS
1. Guaranteed by correlation to 2 MHz on-wafer measurements.
2. Tested on a sample basis only.
MA4BPS101
Min. Typ. Max.
0.13 0.17
1.9 2.4
14
70 110
300
38
MA4BPS201
Min. Typ. Max.
0.20 0.25
1.0 1.3
6
70 110
300
28
MA4BPS301
Min. Typ. Max.
0.30 0.35
0.9 1.2
6
70 110
300
24
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.01

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