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Número de pieza | MA3ZD12 | |
Descripción | Silicon epitaxial planar type | |
Fabricantes | Panasonic | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MA3ZD12 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Schottky Barrier Diodes (SBD)
MA3ZD12
Silicon epitaxial planar type
For high-speed switching circuits
I Features
• S-mini type 3-pin package
• Allowing to rectify under (IF(AV) = 700 mA) condition
• Low forward rise voltage VF (VF < 0.45 V)
• Allowing high-density mounting
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward current*2
VR
VRRM
IF(AV)
20
25
700
V
V
mA
Non-repetitive peak forward
surge current*1
IFSM
2
A
Junction temperature
Tj 125 °C
Storage temperature
Tstg −55 to +125
°C
Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
*2 : Mounted on a alumina printed circuit board
Unit : mm
0.425
2.1 ± 0.1
1.25 ± 0.1
0.425
1
3
2
1 : Anode
2 : NC
3 : Cathode
Flat S-Mini Type Package (3-pin)
Marking Symbol: M5E
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
IR VR = 20 V
VF IF = 700 mA
Ct VR = 0 V, f = 1 MHz
200
0.45
100
µA
V
pF
Reverse recovery time
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
7 ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MA3ZD12.PDF ] |
Número de pieza | Descripción | Fabricantes |
MA3ZD12 | Silicon epitaxial planar type | Panasonic |
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