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PDF MA3XD15 Data sheet ( Hoja de datos )
| Número de pieza | MA3XD15 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Schottky Barrier Diodes (SBD)
MA3XD15
Silicon epitaxial planar type
For rectification
For protection against reverse current
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
I Features
• Mini type 3-pin package
• Low VF or Low IR type: VF < 0.45 V, IR < 100 µA
• Allowing to rectify under (IF(AV) = 1 A) condition
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse voltage
VR
VRRM
20
25
V
V
Non-repetitive peak forward
surge current*1
IFSM
3
A
Average forward current*2
IF(AV)
1.0
A
Junction temperature
Tj 125 °C
Storage temperature
Tstg −55 to +125
°C
Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
*2 : With a alumina PC board
0.1 to 0.3
0.4 ± 0.2
1 : Anode
2 : NC
3 : Cathode
Mini Type Package (3-pin)
Marking Symbol: M5N
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
IR VR = 20 V
VF IF = 1.0 A
Ct VR = 0 V, f = 1 MHz
100
0.45
120
µA
V
pF
Note) Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA3XD15.PDF ] | |
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