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PDF MA3XD11 Data sheet ( Hoja de datos )
| Número de pieza | MA3XD11 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Schottky Barrier Diodes (SBD)
MA3XD11
Silicon epitaxial planar type
For high-frequency rectification
I Features
• Sealed in the Mini type 3-pin package
• Allowing to rectify under (IF(AV) = 1 A) condition
• Low forward rise voltage VF
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward current*1
VR
VRRM
IF(AV)
20
25
1.0
V
V
A
Non-repetitive peak forward
surge current*2
IFSM
3
A
Junction temperature
Tj 125 °C
Storage temperature
Tstg −55 to +125
°C
Note) *1 : With a alumina PC board
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
0.65 ± 0.15
2.8
+
−
0.2
0.3
1.5
+
−
0.25
0.05
Unit : mm
0.65 ± 0.15
1
3
2
0.1 to 0.3
0.4 ± 0.2
1 : Anode
2 : NC
3 : Cathode
Mini Type Package (3-pin)
Marking Symbol: M6K
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
IR VR = 20 V
VF IF = 1.0 A
Ct VR = 0 V, f = 1 MHz
200
0.45
180
µA
V
pF
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of
a human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 400 MHz
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA3XD11.PDF ] | |
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