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PDF MA3X791 Data sheet ( Hoja de datos )

Número de pieza MA3X791
Descripción Silicon epitaxial planar type
Fabricantes Panasonic 
Logotipo Panasonic Logotipo



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No Preview Available ! MA3X791 Hoja de datos, Descripción, Manual

Schottky Barrier Diodes (SBD)
MA3X791
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
0.65 ± 0.15
+ 0.2
2.8 0.3
+ 0.25
1.5 0.05
Unit : mm
0.65 ± 0.15
I Features
Two MA3X786s are contained in one package (series connection)
Allowing to rectify under (IF(AV) = 100 mA) condition
Optimum for high-frequency rectification because of its short re-
verse recovery time (trr)
Low VF (forward rise voltage), with high rectification efficiency
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse voltage
Peak forward
current
Single
Series*2
VR
VRRM
IFM
30
30
300
200
V
V
mA
Average forward Single
current
Series*2
IF(AV)
100
70
mA
Non-repetitive peak forward
surge current*1
IFSM
1
A
Junction temperature
Tj 125 °C
Storage temperature
Tstg 55 to +125
°C
Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
*2 : Value per chip
0.1 to 0.3
0.4 ± 0.2
1 : Anode 1
2 : Cathode 2
3 : Cathode 1 JEDEC : TO-236
Anode 2
EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol: M4A
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR
VF
Ct
trr
Conditions
VR = 30 V
IF = 100 mA
VR = 0 V, f = 1 MHz
IF = IR = 100 mA
Irr = 10 mA, RL = 100
Min Typ Max Unit
15 µA
0.55 V
20 pF
2 ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50
W.F.Analyzer
(SAS-8130)
Ri = 50
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100
1

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