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PDF MA3X717D Data sheet ( Hoja de datos )
| Número de pieza | MA3X717D | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MA3X717D (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Schottky Barrier Diodes (SBD)
MA3X717D, MA3X717E
Silicon epitaxial planar type
For switching circuits
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
I Features
• Two MA3X717s are contained in one package
• Optimum for low-voltage rectification because of its low forward
rise voltage (VF) (Low VF type of MA3X704D/E)
• Optimum for high-frequency rectification because of its short re-
verse recovery time (trr)
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
0.1 to 0.3
0.4 ± 0.2
Reverse voltage (DC)
VR 30
V
Peak reverse voltage
VRM
30
V
Forward current Single
IF
30 mA
(DC)
Double*
20
Peak forward
Single
IFM
150
mA
current
Double*
110
JEDEC : TO-236
EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol
• MA3X717D : M3E
• MA3X717E : M3D
MA3X717D MA3X717E
1 Cathode Anode
2 Cathode Anode
3 Anode Cathode
Junction temperature
Storage temperature
Note) * : Value per chip
Tj 125
Tstg −55 to +125
°C
°C
Internal Connection
11
3
3
22
I Electrical Characteristics Ta = 25°C
DE
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 30 V
VF1 IF = 1 mA
VF2 IF = 30 mA
Ct VR = 1 V, f = 1 MHz
trr IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
30
0.3
1
1.5
1
µA
V
V
pF
ns
Detection efficiency
η Vin = 3 V(peak), f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65 %
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA3X717D.PDF ] | |
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| MA3X717E | Silicon epitaxial planar type | Panasonic |
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