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Número de pieza | MA3X200F | |
Descripción | Silicon epitaxial planar type | |
Fabricantes | Panasonic | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MA3X200F (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Switching Diodes
MA3X200F
Silicon epitaxial planar type
For switching circuits
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
I Features
• Two elements contained in one package, allowing high-density
mounting
• Soft recovery characteristic (Trr: 100 ns)
• Small terminal capacitance, Ct
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Forward voltage
(DC)
Single
Series
VR
VRM
IF
80
80
100
75
Peak forward
current
Single
Series
IFM
225
170
Non-repetitive peak Single
forward surge current* Series
IFSM
500
325
Junction temperature
Storage temperature
Tj 150
Tstg −55 to +150
Note) * : t = 1 s
Unit
V
V
mA
mA
mA
°C
°C
1
3
2
0.1 to 0.3
0.4 ± 0.2
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
Mini Type Package (3-pin)
Marking Symbol: M5M
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*
IR1 VR = 75 V
IR2 VR = 5 V, Ta = 85°C
VF IF = 100 mA
VR IR = 100 µA
Ct VR = 0 V, f = 1 MHz
trr IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tr tp
10%
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Min Typ Max
10
20
1.2
80
2.5
100
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
Unit
nA
nA
V
V
pF
ns
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MA3X200F.PDF ] |
Número de pieza | Descripción | Fabricantes |
MA3X200F | Silicon epitaxial planar type | Panasonic |
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